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Pellegrino, P., Lévêque, P., Kortegaard-Nielsen, H., Wong-Leung, J., Jagadish, C., Svensson, B. G. (2002) Response to “Comment on ‘Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation’ ” [Appl. Phys. Lett. 80, 1492 (2002)]. Applied Physics Letters, 80 (8). 1494-1495 doi:10.1063/1.1455141

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Reference TypeJournal (article/letter/editorial)
TitleResponse to “Comment on ‘Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation’ ” [Appl. Phys. Lett. 80, 1492 (2002)]
JournalApplied Physics Letters
AuthorsPellegrino, P.Author
Lévêque, P.Author
Kortegaard-Nielsen, H.Author
Wong-Leung, J.Author
Jagadish, C.Author
Svensson, B. G.Author
Year2002 (February 25)Volume80
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.1455141Search in ResearchGate
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Mindat Ref. ID8532785Long-form Identifiermindat:1:5:8532785:6
GUID0
Full ReferencePellegrino, P., Lévêque, P., Kortegaard-Nielsen, H., Wong-Leung, J., Jagadish, C., Svensson, B. G. (2002) Response to “Comment on ‘Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation’ ” [Appl. Phys. Lett. 80, 1492 (2002)]. Applied Physics Letters, 80 (8). 1494-1495 doi:10.1063/1.1455141
Plain TextPellegrino, P., Lévêque, P., Kortegaard-Nielsen, H., Wong-Leung, J., Jagadish, C., Svensson, B. G. (2002) Response to “Comment on ‘Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation’ ” [Appl. Phys. Lett. 80, 1492 (2002)]. Applied Physics Letters, 80 (8). 1494-1495 doi:10.1063/1.1455141
In(2002, February) Applied Physics Letters Vol. 80 (8) AIP Publishing

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Pellegrino, P., Lévêque, P., Wong-Leung, J., Jagadish, C., Svensson, B. G. (2001) Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation. Applied Physics Letters, 78 (22). 3442-3444 doi:10.1063/1.1374960
Yarykin, Nikolai (2002) Comment on “Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation” [Appl. Phys. Lett. 78, 3442 (2001)]. Applied Physics Letters, 80 (8). 1492-1493 doi:10.1063/1.1455140
Lévêque, P., Nielsen, H. Kortegaard, Pellegrino, P., Hallén, A., Svensson, B. G., Kuznetsov, A. Yu., Wong-Leung, J., Jagadish, C., Privitera, V. (2003) Vacancy and interstitial depth profiles in ion-implanted silicon. Journal of Applied Physics, 93 (2). 871-877 doi:10.1063/1.1528304
Pellegrino, P, Lévêque, P, Kortegaard-Nielsen, H, Hallén, A, Wong-Leung, J, Jagadish, C, Svensson, B.G (2002) Separation of vacancy and interstitial depth profiles in proton- and boron-implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 186 (1). 334-338 doi:10.1016/s0168-583x(01)00874-6
Berhane, Y., Manasreh, M. O., Yang, H., Salamo, G. J. (2002) Response to “Comment on ‘Thermal annealing effect on the intersublevel transitions in InAs quantum dots’ ” [Appl. Phys. Lett. 80, 4867 (2002)]. Applied Physics Letters, 80 (25). 4869-4870 doi:10.1063/1.1489488
Martin, D. M., Kortegaard Nielsen, H., Lévêque, P., Hallén, A., Alfieri, G., Svensson, B. G. (2004) Bistable defect in mega-electron-volt proton implanted 4H silicon carbide. Applied Physics Letters, 84 (10). 1704-1706 doi:10.1063/1.1651656
Akis, R., Ferry, D. K. (2002) Response to “Comment on ‘Quantum waveguide array generator for performing Fourier transforms: Alternate route to quantum computing’ ” [Appl. Phys. Lett. 80, 2419 (2002)]. Applied Physics Letters, 80 (13). 2420 doi:10.1063/1.1465127
Poole, P. J., Aers, G. C. (2002) Comment on “Thermal annealing effect on the intersublevel transitions in InAs quantum dots” [Appl. Phys. Lett. 78, 2196 (2001)]. Applied Physics Letters, 80 (25). 4867-4868 doi:10.1063/1.1489487
Khizroev, S., Litvinov, D. (2002) Response to “Comment on ‘On the mechanism of the cubic phase formation in the boron nitride thin-film systems’ ” [Appl. Phys. Lett. 80, 1306 (2002)]. Applied Physics Letters, 80 (7). 1308-1309 doi:10.1063/1.1452777
Wilde, G. (2002) Comment on “Specific heat and thermodynamic properties of undercooled liquid cobalt” [Appl. Phys. Lett. 80, 28 (2002)]. Applied Physics Letters, 81 (17). 3290-3291 doi:10.1063/1.1515360
Lévêque, P., A Hallén, , Svensson, B. G., Wong-Leung, J., Jagadish, C., Privitera, V. (2003) Identification of hydrogen related defects in proton implanted float-zone silicon. The European Physical Journal Applied Physics, 23 (1). 5-9 doi:10.1051/epjap:2002113
 
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