Reference Type | Journal (article/letter/editorial) |
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Title | Formation of the GaN conversion layer in GaP (111)B wafers using ammonia gas |
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Journal | Applied Physics Letters |
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Authors | Kuriyama, K. | Author |
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Nagasawa, K. | Author |
Suzuki, Y. | Author |
Kushida, K. | Author |
Year | 2002 (March 4) | Volume | 80 |
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Issue | 9 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.1456953Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8532829 | Long-form Identifier | mindat:1:5:8532829:9 |
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GUID | 0 |
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Full Reference | Kuriyama, K., Nagasawa, K., Suzuki, Y., Kushida, K. (2002) Formation of the GaN conversion layer in GaP (111)B wafers using ammonia gas. Applied Physics Letters, 80 (9). 1562-1564 doi:10.1063/1.1456953 |
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Plain Text | Kuriyama, K., Nagasawa, K., Suzuki, Y., Kushida, K. (2002) Formation of the GaN conversion layer in GaP (111)B wafers using ammonia gas. Applied Physics Letters, 80 (9). 1562-1564 doi:10.1063/1.1456953 |
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In | (2002, March) Applied Physics Letters Vol. 80 (9) AIP Publishing |
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