Fujihira, K., Kimoto, T., Matsunami, H. (2002) High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition. Applied Physics Letters, 80 (9). 1586-1588 doi:10.1063/1.1456968
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition | ||
| Journal | Applied Physics Letters | ||
| Authors | Fujihira, K. | Author | |
| Kimoto, T. | Author | ||
| Matsunami, H. | Author | ||
| Year | 2002 (March 4) | Volume | 80 |
| Issue | 9 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.1456968Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8532832 | Long-form Identifier | mindat:1:5:8532832:3 |
| GUID | 0 | ||
| Full Reference | Fujihira, K., Kimoto, T., Matsunami, H. (2002) High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition. Applied Physics Letters, 80 (9). 1586-1588 doi:10.1063/1.1456968 | ||
| Plain Text | Fujihira, K., Kimoto, T., Matsunami, H. (2002) High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition. Applied Physics Letters, 80 (9). 1586-1588 doi:10.1063/1.1456968 | ||
| In | (2002, March) Applied Physics Letters Vol. 80 (9) AIP Publishing | ||
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