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Kim, Hyoungsub, Marshall, Ann, McIntyre, Paul C., Saraswat, Krishna C. (2004) Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies. Applied Physics Letters, 84 (12). 2064-2066 doi:10.1063/1.1667621

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Reference TypeJournal (article/letter/editorial)
TitleCrystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies
JournalApplied Physics Letters
AuthorsKim, HyoungsubAuthor
Marshall, AnnAuthor
McIntyre, Paul C.Author
Saraswat, Krishna C.Author
Year2004 (March 22)Volume84
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1667621Search in ResearchGate
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Mindat Ref. ID8538097Long-form Identifiermindat:1:5:8538097:0
GUID0
Full ReferenceKim, Hyoungsub, Marshall, Ann, McIntyre, Paul C., Saraswat, Krishna C. (2004) Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies. Applied Physics Letters, 84 (12). 2064-2066 doi:10.1063/1.1667621
Plain TextKim, Hyoungsub, Marshall, Ann, McIntyre, Paul C., Saraswat, Krishna C. (2004) Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies. Applied Physics Letters, 84 (12). 2064-2066 doi:10.1063/1.1667621
In(2004, March) Applied Physics Letters Vol. 84 (12) AIP Publishing

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Kim, Hyoungsub, McIntyre, Paul C., Saraswat, Krishna C. (2003) Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition. Applied Physics Letters, 82 (1). 106-108 doi:10.1063/1.1533117
Wang, Dunwei, Wang, Qian, Javey, Ali, Tu, Ryan, Dai, Hongjie, Kim, Hyoungsub, McIntyre, Paul C., Krishnamohan, Tejas, Saraswat, Krishna C. (2003) Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics. Applied Physics Letters, 83 (12). 2432-2434 doi:10.1063/1.1611644
Seo, Kang-ill, McIntyre, Paul C., Kim, Hyoungsub, Saraswat, Krishna C. (2005) Formation of an interfacial Zr-silicate layer between ZrO2 and Si through in situ vacuum annealing. Applied Physics Letters, 86 (8). 82904pp. doi:10.1063/1.1866644
Kim, Hyoungsub, McIntyre, Paul C., Chui, Chi On, Saraswat, Krishna C., Cho, Mann-Ho (2004) Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition. Applied Physics Letters, 85 (14). 2902-2904 doi:10.1063/1.1797564
Sreenivasan, Raghavasimhan, McIntyre, Paul C., Kim, Hyoungsub, Saraswat, Krishna C. (2006) Effect of impurities on the fixed charge of nanoscale HfO2 films grown by atomic layer deposition. Applied Physics Letters, 89 (11). 112903pp. doi:10.1063/1.2348735
Chen, Rong, Kim, Hyoungsub, McIntyre, Paul C., Bent, Stacey F. (2004) Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-κ gate dielectrics. Applied Physics Letters, 84 (20). 4017-4019 doi:10.1063/1.1751211
Kim, Eun Ji, Shandalov, Michael, Saraswat, Krishna C., McIntyre, Paul C. (2011) Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics. Applied Physics Letters, 98 (3). 32108pp. doi:10.1063/1.3527977
Kim, Hyoungsub, McIntyre, Paul C., Saraswat, Krishna C. (2004) Microstructural evolution of ZrO2–HfO2 nanolaminate structures grown by atomic layer deposition. Journal of Materials Research, 19 (2) 643-650 doi:10.1557/jmr.2004.19.2.643
Ramanathan, Shriram, McIntyre, Paul C., Guha, Supratik, Gusev, Evgeni (2004) Charge trapping studies on ultrathin ZrO2 and HfO2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation. Applied Physics Letters, 84 (3). 389-391 doi:10.1063/1.1636532
Kim, Hyoungsub, Chui, Chi On, Saraswat, Krishna C., McIntyre, Paul C. (2003) Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy. Applied Physics Letters, 83 (13). 2647-2649 doi:10.1063/1.1613031
Lee, Sang-Yun, Kim, Hyoungsub, McIntyre, Paul C., Saraswat, Krishna C., Byun, Jeong-Soo (2003) Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application. Applied Physics Letters, 82 (17). 2874-2876 doi:10.1063/1.1569985
 
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