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Kang, Chang Yong, Cho, Hag-Ju, Choi, Rino, Kang, Chang Seok, Kim, Young Hee, Rhee, Se Jong, Choi, Chang Hwan, Akbar, Shahriar M., Lee, Jack C. (2004) Effects of dielectric structure of HfO2 on carrier generation rate in Si substrate and channel mobility. Applied Physics Letters, 84 (12). 2148-2150 doi:10.1063/1.1689744

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Reference TypeJournal (article/letter/editorial)
TitleEffects of dielectric structure of HfO2 on carrier generation rate in Si substrate and channel mobility
JournalApplied Physics Letters
AuthorsKang, Chang YongAuthor
Cho, Hag-JuAuthor
Choi, RinoAuthor
Kang, Chang SeokAuthor
Kim, Young HeeAuthor
Rhee, Se JongAuthor
Choi, Chang HwanAuthor
Akbar, Shahriar M.Author
Lee, Jack C.Author
Year2004 (March 22)Volume84
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1689744Search in ResearchGate
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Mindat Ref. ID8538148Long-form Identifiermindat:1:5:8538148:3
GUID0
Full ReferenceKang, Chang Yong, Cho, Hag-Ju, Choi, Rino, Kang, Chang Seok, Kim, Young Hee, Rhee, Se Jong, Choi, Chang Hwan, Akbar, Shahriar M., Lee, Jack C. (2004) Effects of dielectric structure of HfO2 on carrier generation rate in Si substrate and channel mobility. Applied Physics Letters, 84 (12). 2148-2150 doi:10.1063/1.1689744
Plain TextKang, Chang Yong, Cho, Hag-Ju, Choi, Rino, Kang, Chang Seok, Kim, Young Hee, Rhee, Se Jong, Choi, Chang Hwan, Akbar, Shahriar M., Lee, Jack C. (2004) Effects of dielectric structure of HfO2 on carrier generation rate in Si substrate and channel mobility. Applied Physics Letters, 84 (12). 2148-2150 doi:10.1063/1.1689744
In(2004, March) Applied Physics Letters Vol. 84 (12) AIP Publishing

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Rhee, Se Jong, Kang, Chang Yong, Kang, Chang Seok, Choi, Rino, Choi, Chang Hwan, Akbar, Mohammad S., Lee, Jack C. (2004) Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor. Applied Physics Letters, 85 (7). 1286-1288 doi:10.1063/1.1773370
Rhee, Se Jong, Kang, Chang Yong, Kang, Chang Seok, Choi, Chang Hwan, Choi, Rino, Akbar, Mohammad S., Lee, Jack C. (2004) Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO2 metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 85 (15). 3184-3186 doi:10.1063/1.1805196
Choi, Rino, Kang, Chang Seok, Cho, Hag-Ju, Kim, Young-Hee, Akbar, Mohammad S., Lee, Jack C. (2004) Effects of high temperature forming gas anneal on the characteristics of metal-oxide-semiconductor field-effect transistor with HfO2 gate stack. Applied Physics Letters, 84 (24). 4839-4841 doi:10.1063/1.1755412
Kang, Chang Yong, Rhee, Se Jong, Choi, Chang Hwan, Akvar, M. S., Zhang, Manhong, Lee, Taekhwi, Ok, Injo, Lee, Jack C. (2005) Effects of tantalum penetration through hafnium oxide layer on carrier generation rate in silicon substrate and carrier mobility degradation. Applied Physics Letters, 86 (1). 12901pp. doi:10.1063/1.1845588
Kang, Chang Yong, Rhee, Se Jong, Choi, Chang Hwan, Kang, Chang Seok, Choi, Rino, Akbar, Mohammad S., Zhang, Manhong, Krishnan, Siddarth A., Lee, Jack C. (2005) Effects of nitrogen-incorporated interface layer on the transient characteristics of hafnium oxide n-metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 86 (12). 123506pp. doi:10.1063/1.1890479
Zhu, Feng, Kang, Chang Yong, Rhee, Se Jong, Choi, Chang Hwan, Krishnan, Siddarth A., Zhang, Manhong, Kim, Hyoung-Sub, Lee, Taekhwi, Ok, Injo, Thareja, Gaurav, Lee, Jack C. (2006) Mechanism of improved channel carrier mobility for stacked Y2O3∕HfO2 gate dielectric. Applied Physics Letters, 89 (17). 173501pp. doi:10.1063/1.2363141
Kang, Chang Yong, Lysaght, Pat, Choi, Rino, Lee, Byoung Hun, Rhee, Se Jong, Choi, Chang Hwan, Akbar, M. S., Lee, Jack C. (2005) Nickel-silicide phase effects on flatband voltage shift and equivalent oxide thickness decrease of hafnium silicon oxynitride metal-silicon-oxide capacitors. Applied Physics Letters, 86 (22). 222906pp. doi:10.1063/1.1942633
Rhee, Se Jong, Zhu, Feng, Kim, Hyoung-Sub, Kang, Chang Yong, Choi, Chang Hwan, Zhang, Manhong, Lee, Tackhwi, Ok, Injo, Krishnan, Siddarth A., Lee, Jack C. (2006) Systematic analysis of silicon oxynitride interfacial layer and its effects on electrical characteristics of high-k HfO2 transistor. Applied Physics Letters, 88 (15). 153515pp. doi:10.1063/1.2192646
Nieh, Renee, Choi, Rino, Gopalan, Sundar, Onishi, Katsunori, Kang, Chang Seok, Cho, Hag-Ju, Krishnan, Siddarth, Lee, Jack C. (2002) Evaluation of silicon surface nitridation effects on ultra-thin ZrO2 gate dielectrics. Applied Physics Letters, 81 (9). 1663-1665 doi:10.1063/1.1504165
Kang, Chang Seok, Cho, Hag-Ju, Onishi, Katsunori, Nieh, Renee, Choi, Rino, Gopalan, Sundar, Krishnan, Sid, Han, Jeong H., Lee, Jack C. (2002) Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics. Applied Physics Letters, 81 (14). 2593-2595 doi:10.1063/1.1510155
Wang, J. G., Kim, Jiyoung, Kang, Chang Yong, Lee, Byoung Hun, Jammy, Raj, Choi, Rino, Kim, M. J. (2008) Origin of tensile stress in the Si substrate induced by TiN∕HfO2 metal gate/high-k dielectric gate stack. Applied Physics Letters, 93 (16). 161913pp. doi:10.1063/1.3009572
 
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