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Chang, W.-H., Chen, Hsiang-Yu, Chang, H.-S., Chen, W.-Y., Hsu, T. M., Hsieh, T.-P., Chyi, J.-I., Yeh, N.-T. (2005) Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 86 (13). 131917pp. doi:10.1063/1.1894613

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Reference TypeJournal (article/letter/editorial)
TitleElectroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsChang, W.-H.Author
Chen, Hsiang-YuAuthor
Chang, H.-S.Author
Chen, W.-Y.Author
Hsu, T. M.Author
Hsieh, T.-P.Author
Chyi, J.-I.Author
Yeh, N.-T.Author
Year2005 (March 28)Volume86
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.1894613Search in ResearchGate
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Mindat Ref. ID8542214Long-form Identifiermindat:1:5:8542214:2
GUID0
Full ReferenceChang, W.-H., Chen, Hsiang-Yu, Chang, H.-S., Chen, W.-Y., Hsu, T. M., Hsieh, T.-P., Chyi, J.-I., Yeh, N.-T. (2005) Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 86 (13). 131917pp. doi:10.1063/1.1894613
Plain TextChang, W.-H., Chen, Hsiang-Yu, Chang, H.-S., Chen, W.-Y., Hsu, T. M., Hsieh, T.-P., Chyi, J.-I., Yeh, N.-T. (2005) Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 86 (13). 131917pp. doi:10.1063/1.1894613
In(2005, March) Applied Physics Letters Vol. 86 (13) AIP Publishing


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