Chang, W.-H., Chen, Hsiang-Yu, Chang, H.-S., Chen, W.-Y., Hsu, T. M., Hsieh, T.-P., Chyi, J.-I., Yeh, N.-T. (2005) Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 86 (13). 131917pp. doi:10.1063/1.1894613
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition | ||
Journal | Applied Physics Letters | ||
Authors | Chang, W.-H. | Author | |
Chen, Hsiang-Yu | Author | ||
Chang, H.-S. | Author | ||
Chen, W.-Y. | Author | ||
Hsu, T. M. | Author | ||
Hsieh, T.-P. | Author | ||
Chyi, J.-I. | Author | ||
Yeh, N.-T. | Author | ||
Year | 2005 (March 28) | Volume | 86 |
Issue | 13 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.1894613Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8542214 | Long-form Identifier | mindat:1:5:8542214:2 |
GUID | 0 | ||
Full Reference | Chang, W.-H., Chen, Hsiang-Yu, Chang, H.-S., Chen, W.-Y., Hsu, T. M., Hsieh, T.-P., Chyi, J.-I., Yeh, N.-T. (2005) Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 86 (13). 131917pp. doi:10.1063/1.1894613 | ||
Plain Text | Chang, W.-H., Chen, Hsiang-Yu, Chang, H.-S., Chen, W.-Y., Hsu, T. M., Hsieh, T.-P., Chyi, J.-I., Yeh, N.-T. (2005) Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 86 (13). 131917pp. doi:10.1063/1.1894613 | ||
In | (2005, March) Applied Physics Letters Vol. 86 (13) AIP Publishing |
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