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Cubaynes, F. N., Venezia, V. C., van der Marel, C., Snijders, J. H. M., Everaert, J. L., Shi, X., Rothschild, A., Schaekers, M. (2005) Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics. Applied Physics Letters, 86 (17). 172903pp. doi:10.1063/1.1915523

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Reference TypeJournal (article/letter/editorial)
TitlePlasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics
JournalApplied Physics Letters
AuthorsCubaynes, F. N.Author
Venezia, V. C.Author
van der Marel, C.Author
Snijders, J. H. M.Author
Everaert, J. L.Author
Shi, X.Author
Rothschild, A.Author
Schaekers, M.Author
Year2005 (April 25)Volume86
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.1915523Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8542564Long-form Identifiermindat:1:5:8542564:4
GUID0
Full ReferenceCubaynes, F. N., Venezia, V. C., van der Marel, C., Snijders, J. H. M., Everaert, J. L., Shi, X., Rothschild, A., Schaekers, M. (2005) Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics. Applied Physics Letters, 86 (17). 172903pp. doi:10.1063/1.1915523
Plain TextCubaynes, F. N., Venezia, V. C., van der Marel, C., Snijders, J. H. M., Everaert, J. L., Shi, X., Rothschild, A., Schaekers, M. (2005) Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics. Applied Physics Letters, 86 (17). 172903pp. doi:10.1063/1.1915523
In(2005, April) Applied Physics Letters Vol. 86 (17) AIP Publishing

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Krisch, K. S., Gross, B. J., Sodini, C. G. (1991) Positive‐charge trapping in nitrided oxide and reoxidized nitrided oxide gate dielectrics. Journal of Applied Physics, 70 (4). 2185-2194 doi:10.1063/1.349457
Dunn, G. J., Jayaraman, R., Yang, W., Sodini, C. G. (1988) Radiation effects in low‐pressure reoxidized nitrided oxide gate dielectrics. Applied Physics Letters, 52 (20). 1713-1715 doi:10.1063/1.99711
Dunn, G. J. (1988) Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler–Nordheim stressing. Applied Physics Letters, 53 (17). 1650-1651 doi:10.1063/1.100440
Mallik, A., Vasi, J., Chandorkar, A. N. (1993) The nature of the hole traps in reoxidized nitrided oxide gate dielectrics. Journal of Applied Physics, 74 (4). 2665-2668 doi:10.1063/1.354658
Zhu, Shiyang, Nakajima, Anri, Ohashi, Takuo, Miyake, Hideharu (2005) Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics. Journal of Applied Physics, 98 (11). 114504pp. doi:10.1063/1.2138372
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Yang, J. B., Chen, T. P., Tan, S. S., Ng, C. M., Chan, L. (2008) Influence of hydrogen dispersive diffusion in nitrided gate oxide on negative bias temperature instability. Applied Physics Letters, 93 (1). 13501pp. doi:10.1063/1.2956388
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Chen, C. W., Fang, Y. K., Lee, G. Y., Hsieh, J. C., Liang, M. S. (1995) Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric. Applied Physics Letters, 67 (10). 1456-1458 doi:10.1063/1.114493
 
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