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Puthenkovilakam, Ragesh, Sawkar, Monica, Chang, Jane P. (2005) Electrical characteristics of postdeposition annealed HfO2 on silicon. Applied Physics Letters, 86 (20). 202902pp. doi:10.1063/1.1927273

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Reference TypeJournal (article/letter/editorial)
TitleElectrical characteristics of postdeposition annealed HfO2 on silicon
JournalApplied Physics Letters
AuthorsPuthenkovilakam, RageshAuthor
Sawkar, MonicaAuthor
Chang, Jane P.Author
Year2005 (May 16)Volume86
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1927273Search in ResearchGate
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Mindat Ref. ID8542916Long-form Identifiermindat:1:5:8542916:3
GUID0
Full ReferencePuthenkovilakam, Ragesh, Sawkar, Monica, Chang, Jane P. (2005) Electrical characteristics of postdeposition annealed HfO2 on silicon. Applied Physics Letters, 86 (20). 202902pp. doi:10.1063/1.1927273
Plain TextPuthenkovilakam, Ragesh, Sawkar, Monica, Chang, Jane P. (2005) Electrical characteristics of postdeposition annealed HfO2 on silicon. Applied Physics Letters, 86 (20). 202902pp. doi:10.1063/1.1927273
In(2005, May) Applied Physics Letters Vol. 86 (20) AIP Publishing

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Choi, Jongwoo, Puthenkovilakam, Ragesh, Chang, Jane P. (2005) Band structure and alignment of the AlN∕SiC heterostructure. Applied Physics Letters, 86 (19). 192101pp. doi:10.1063/1.1923187
Puthenkovilakam, Ragesh, Chang, Jane P. (2004) An accurate determination of barrier heights at the HfO2∕Si interfaces. Journal of Applied Physics, 96 (5). 2701-2707 doi:10.1063/1.1778213
Puthenkovilakam, Ragesh, Chang, Jane P. (2004) Valence band structure and band alignment at the ZrO2/Si interface. Applied Physics Letters, 84 (8). 1353-1355 doi:10.1063/1.1650547
Lin, Y.-S., Puthenkovilakam, R., Chang, J. P. (2002) Dielectric property and thermal stability of HfO2 on silicon. Applied Physics Letters, 81 (11). 2041-2043 doi:10.1063/1.1506207
Puthenkovilakam, R., Lin, Y. -S., Choi, J., Lu, J., Blom, H.-O., Pianetta, P., Devine, D., Sendler, M., Chang, J. P. (2005) Effects of post–deposition annealing on the material characteristics of ultrathin HfO2 films on silicon. Journal of Applied Physics, 97 (2). 23704pp. doi:10.1063/1.1831543
Sawkar-Mathur, Monica, Perng, Ya-Chuan, Lu, Jun, Blom, Hans-Olof, Bargar, John, Chang, Jane P. (2008) The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge. Applied Physics Letters, 93 (23). 233501pp. doi:10.1063/1.3040311
Sawkar-Mathur, Monica, Chang, Jane P. (2008) Material and electrical properties of HfxRuy and HfxRuyNz metals as gate electrodes for p-metal oxide semiconductor field effect transistor devices. Journal of Applied Physics, 104 (8). 84101pp. doi:10.1063/1.2996111
Tanner, Carey M., Sawkar-Mathur, Monica, Lu, Jun, Blom, Hans-Olof, Toney, Michael F., Chang, Jane P. (2007) Structural properties of epitaxial γ-Al2O3 (111) thin films on 4H-SiC (0001). Applied Physics Letters, 90 (6). 61916pp. doi:10.1063/1.2435978
Puthenkovilakam, Ragesh, Carter, Emily A., Chang, Jane P. (2004) First-principles exploration of alternative gate dielectrics: Electronic structure ofZrO2/SiandZrSiO4/Siinterfaces. Physical Review B, 69 (15) doi:10.1103/physrevb.69.155329
Jeon, Chang Min, Lee, Jong-Lam (2005) Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN∕GaN heterostructure field-effect transistors. Applied Physics Letters, 86 (17). 172101pp. doi:10.1063/1.1906328
Tanner, Carey M., Toney, Michael F., Lu, Jun, Blom, Hans-Olof, Sawkar-Mathur, Monica, Tafesse, Melat A., Chang, Jane P. (2007) Engineering epitaxial γ-Al2O3 gate dielectric films on 4H-SiC. Journal of Applied Physics, 102 (10). 104112pp. doi:10.1063/1.2812609
 
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