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Cohen, G. M., Mooney, P. M., Paruchuri, V. K., Hovel, H. J. (2005) Dislocation-free strained silicon-on-silicon by in-place bonding. Applied Physics Letters, 86 (25). 251902pp. doi:10.1063/1.1949284

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Reference TypeJournal (article/letter/editorial)
TitleDislocation-free strained silicon-on-silicon by in-place bonding
JournalApplied Physics Letters
AuthorsCohen, G. M.Author
Mooney, P. M.Author
Paruchuri, V. K.Author
Hovel, H. J.Author
Year2005 (June 20)Volume86
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.1949284Search in ResearchGate
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Mindat Ref. ID8543322Long-form Identifiermindat:1:5:8543322:7
GUID0
Full ReferenceCohen, G. M., Mooney, P. M., Paruchuri, V. K., Hovel, H. J. (2005) Dislocation-free strained silicon-on-silicon by in-place bonding. Applied Physics Letters, 86 (25). 251902pp. doi:10.1063/1.1949284
Plain TextCohen, G. M., Mooney, P. M., Paruchuri, V. K., Hovel, H. J. (2005) Dislocation-free strained silicon-on-silicon by in-place bonding. Applied Physics Letters, 86 (25). 251902pp. doi:10.1063/1.1949284
In(2005, June) Applied Physics Letters Vol. 86 (25) AIP Publishing

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