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Ye, P. D., Wilk, G. D., Tois, E. E., Wang, Jian Jim (2005) Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition. Applied Physics Letters, 87 (1). 13501pp. doi:10.1063/1.1954902

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Reference TypeJournal (article/letter/editorial)
TitleFormation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition
JournalApplied Physics Letters
AuthorsYe, P. D.Author
Wilk, G. D.Author
Tois, E. E.Author
Wang, Jian JimAuthor
Year2005 (July 4)Volume87
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1954902Search in ResearchGate
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Mindat Ref. ID8544071Long-form Identifiermindat:1:5:8544071:3
GUID0
Full ReferenceYe, P. D., Wilk, G. D., Tois, E. E., Wang, Jian Jim (2005) Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition. Applied Physics Letters, 87 (1). 13501pp. doi:10.1063/1.1954902
Plain TextYe, P. D., Wilk, G. D., Tois, E. E., Wang, Jian Jim (2005) Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition. Applied Physics Letters, 87 (1). 13501pp. doi:10.1063/1.1954902
In(2005, July) Applied Physics Letters Vol. 87 (1) AIP Publishing

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Xuan, Y., Ye, P. D., Lin, H. C., Wilk, G. D. (2006) Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric. Applied Physics Letters, 89 (13). 132103pp. doi:10.1063/1.2357566
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Shahrjerdi, D., Garcia-Gutierrez, D. I., Akyol, T., Bank, S. R., Tutuc, E., Lee, J. C., Banerjee, S. K. (2007) GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization. Applied Physics Letters, 91 (19). 193503pp. doi:10.1063/1.2806190
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