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Osaka, J., Ohno, Y., Kishimoto, S., Maezawa, K., Mizutani, T. (2005) Deep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy. Applied Physics Letters, 87 (22). 222112pp. doi:10.1063/1.2137901

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Reference TypeJournal (article/letter/editorial)
TitleDeep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy
JournalApplied Physics Letters
AuthorsOsaka, J.Author
Ohno, Y.Author
Kishimoto, S.Author
Maezawa, K.Author
Mizutani, T.Author
Year2005 (November 28)Volume87
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2137901Search in ResearchGate
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Mindat Ref. ID8545280Long-form Identifiermindat:1:5:8545280:6
GUID0
Full ReferenceOsaka, J., Ohno, Y., Kishimoto, S., Maezawa, K., Mizutani, T. (2005) Deep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy. Applied Physics Letters, 87 (22). 222112pp. doi:10.1063/1.2137901
Plain TextOsaka, J., Ohno, Y., Kishimoto, S., Maezawa, K., Mizutani, T. (2005) Deep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy. Applied Physics Letters, 87 (22). 222112pp. doi:10.1063/1.2137901
In(2005, November) Applied Physics Letters Vol. 87 (22) AIP Publishing

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Wang, Y. H., Li, S. S. (1990) A study of deep‐level defects in metalorganic vapor‐phase‐epitaxy‐grown ZnSe on GaAs by deep‐level transient spectroscopy. Journal of Applied Physics, 68 (5). 2535-2537 doi:10.1063/1.346476
Danno, K., Kimoto, T., Matsunami, H. (2005) Midgap levels in both n- and p-type 4H–SiC epilayers investigated by deep level transient spectroscopy. Applied Physics Letters, 86 (12). 122104pp. doi:10.1063/1.1886904
Kanegae, Kazutaka, Fujikura, Hajime, Otoki, Yohei, Konno, Taichiro, Yoshida, Takehiro, Horita, Masahiro, Kimoto, Tsunenobu, Suda, Jun (2019) Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy. Applied Physics Letters, 115 (1). 12103pp. doi:10.1063/1.5098965
Mitsunaga, T., Yagishita, Y., Kurouchi, M., Kishimoto, S., Osaka, J., Mizutani, T. (2008) Evaluation of deep levels in GaN grown by RF-MBE on GaN template by capacitance DLTS. physica status solidi (c), 5 (9). 3032-3034 doi:10.1002/pssc.200779296
Ando, K., Kawaguchi, Y., Ohno, T., Ohki, A., Zembutsu, S. (1993) Deep hole trap properties ofp‐type ZnSe grown by molecular beam epitaxy. Applied Physics Letters, 63 (2). 191-193 doi:10.1063/1.110396
Huang, J. W., Kuech, T. F. (1994) Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation. Applied Physics Letters, 65 (5). 604-606 doi:10.1063/1.112270
Ohno, Y., Asaoka, K., Kishimoto, S., Maezawa, K., Mizutani, T. (2000) Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy. Journal of Applied Physics, 87 (9). 4332-4336 doi:10.1063/1.373074
Hacke, P., Detchprohm, T., Hiramatsu, K., Sawaki, N. (1993) Schottky barrier onn‐type GaN grown by hydride vapor phase epitaxy. Applied Physics Letters, 63 (19). 2676-2678 doi:10.1063/1.110417
Lee, In-Hwan, Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Usikov, A. S., Helava, H., Makarov, Yu. N., Pearton, S. J. (2014) Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy. Journal of Applied Physics, 115 (22). 223702pp. doi:10.1063/1.4882715
Fang, Z.-Q., Look, D. C., Kim, D. H., Adesida, I. (2005) Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy. Applied Physics Letters, 87 (18). 182115pp. doi:10.1063/1.2126145
Wada, K., Ikuta, K., Osaka, J., Inoue, N. (1987) Analysis of scanning deep level transient spectroscopy. Applied Physics Letters, 51 (20). 1617-1619 doi:10.1063/1.98573
 
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