Kim, D. C., Lee, M. J., Ahn, S. E., Seo, S., Park, J. C., Yoo, I. K., Baek, I. G., Kim, H. J., Yim, E. K., Lee, J. E., Park, S. O., Kim, H. S., Chung, U-In, Moon, J. T., Ryu, B. I. (2006) Improvement of resistive memory switching in NiO using IrO2. Applied Physics Letters, 88 (23). 232106pp. doi:10.1063/1.2210087
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Improvement of resistive memory switching in NiO using IrO2 | ||
| Journal | Applied Physics Letters | ||
| Authors | Kim, D. C. | Author | |
| Lee, M. J. | Author | ||
| Ahn, S. E. | Author | ||
| Seo, S. | Author | ||
| Park, J. C. | Author | ||
| Yoo, I. K. | Author | ||
| Baek, I. G. | Author | ||
| Kim, H. J. | Author | ||
| Yim, E. K. | Author | ||
| Lee, J. E. | Author | ||
| Park, S. O. | Author | ||
| Kim, H. S. | Author | ||
| Chung, U-In | Author | ||
| Moon, J. T. | Author | ||
| Ryu, B. I. | Author | ||
| Year | 2006 (June 5) | Volume | 88 |
| Issue | 23 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2210087Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8548008 | Long-form Identifier | mindat:1:5:8548008:5 |
| GUID | 0 | ||
| Full Reference | Kim, D. C., Lee, M. J., Ahn, S. E., Seo, S., Park, J. C., Yoo, I. K., Baek, I. G., Kim, H. J., Yim, E. K., Lee, J. E., Park, S. O., Kim, H. S., Chung, U-In, Moon, J. T., Ryu, B. I. (2006) Improvement of resistive memory switching in NiO using IrO2. Applied Physics Letters, 88 (23). 232106pp. doi:10.1063/1.2210087 | ||
| Plain Text | Kim, D. C., Lee, M. J., Ahn, S. E., Seo, S., Park, J. C., Yoo, I. K., Baek, I. G., Kim, H. J., Yim, E. K., Lee, J. E., Park, S. O., Kim, H. S., Chung, U-In, Moon, J. T., Ryu, B. I. (2006) Improvement of resistive memory switching in NiO using IrO2. Applied Physics Letters, 88 (23). 232106pp. doi:10.1063/1.2210087 | ||
| In | (2006, June) Applied Physics Letters Vol. 88 (23) AIP Publishing | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
