Hiroshiba, Nobuya, Kumashiro, Ryotaro, Tanigaki, Katsumi, Takenobu, Taishi, Iwasa, Yoshihiro, Kotani, Kenta, Kawayama, Iwao, Tonouchi, Masayoshi (2006) Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator. Applied Physics Letters, 89 (15). 152110pp. doi:10.1063/1.2360207
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator | ||
| Journal | Applied Physics Letters | ||
| Authors | Hiroshiba, Nobuya | Author | |
| Kumashiro, Ryotaro | Author | ||
| Tanigaki, Katsumi | Author | ||
| Takenobu, Taishi | Author | ||
| Iwasa, Yoshihiro | Author | ||
| Kotani, Kenta | Author | ||
| Kawayama, Iwao | Author | ||
| Tonouchi, Masayoshi | Author | ||
| Year | 2006 (October 9) | Volume | 89 |
| Issue | 15 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2360207Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8550007 | Long-form Identifier | mindat:1:5:8550007:9 |
| GUID | 0 | ||
| Full Reference | Hiroshiba, Nobuya, Kumashiro, Ryotaro, Tanigaki, Katsumi, Takenobu, Taishi, Iwasa, Yoshihiro, Kotani, Kenta, Kawayama, Iwao, Tonouchi, Masayoshi (2006) Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator. Applied Physics Letters, 89 (15). 152110pp. doi:10.1063/1.2360207 | ||
| Plain Text | Hiroshiba, Nobuya, Kumashiro, Ryotaro, Tanigaki, Katsumi, Takenobu, Taishi, Iwasa, Yoshihiro, Kotani, Kenta, Kawayama, Iwao, Tonouchi, Masayoshi (2006) Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator. Applied Physics Letters, 89 (15). 152110pp. doi:10.1063/1.2360207 | ||
| In | (2006, October) Applied Physics Letters Vol. 89 (15) AIP Publishing | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
