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Park, Nae-Man, Kim, Sang Hyeob, Maeng, Sunglyul, Park, Seong-Ju (2006) High negative differential resistance in silicon quantum dot metal-insulator-semiconductor structure. Applied Physics Letters, 89 (15). 153117pp. doi:10.1063/1.2360888

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Reference TypeJournal (article/letter/editorial)
TitleHigh negative differential resistance in silicon quantum dot metal-insulator-semiconductor structure
JournalApplied Physics Letters
AuthorsPark, Nae-ManAuthor
Kim, Sang HyeobAuthor
Maeng, SunglyulAuthor
Park, Seong-JuAuthor
Year2006 (October 9)Volume89
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2360888Search in ResearchGate
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Mindat Ref. ID8550024Long-form Identifiermindat:1:5:8550024:6
GUID0
Full ReferencePark, Nae-Man, Kim, Sang Hyeob, Maeng, Sunglyul, Park, Seong-Ju (2006) High negative differential resistance in silicon quantum dot metal-insulator-semiconductor structure. Applied Physics Letters, 89 (15). 153117pp. doi:10.1063/1.2360888
Plain TextPark, Nae-Man, Kim, Sang Hyeob, Maeng, Sunglyul, Park, Seong-Ju (2006) High negative differential resistance in silicon quantum dot metal-insulator-semiconductor structure. Applied Physics Letters, 89 (15). 153117pp. doi:10.1063/1.2360888
In(2006, October) Applied Physics Letters Vol. 89 (15) AIP Publishing

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