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Xue, Wei, Liu, Yi, Cui, Tianhong (2006) High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO2 nanoparticle dielectric layer. Applied Physics Letters, 89 (16). 163512pp. doi:10.1063/1.2361278

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Reference TypeJournal (article/letter/editorial)
TitleHigh-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO2 nanoparticle dielectric layer
JournalApplied Physics Letters
AuthorsXue, WeiAuthor
Liu, YiAuthor
Cui, TianhongAuthor
Year2006 (October 16)Volume89
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2361278Search in ResearchGate
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Mindat Ref. ID8550134Long-form Identifiermindat:1:5:8550134:2
GUID0
Full ReferenceXue, Wei, Liu, Yi, Cui, Tianhong (2006) High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO2 nanoparticle dielectric layer. Applied Physics Letters, 89 (16). 163512pp. doi:10.1063/1.2361278
Plain TextXue, Wei, Liu, Yi, Cui, Tianhong (2006) High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO2 nanoparticle dielectric layer. Applied Physics Letters, 89 (16). 163512pp. doi:10.1063/1.2361278
In(2006, October) Applied Physics Letters Vol. 89 (16) AIP Publishing

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Cui, Tianhong, Liu, Yi, Zhu, Mo (2005) Field-effect transistors with layer-by-layer self-assembled nanoparticle thin films as channel and gate dielectric. Applied Physics Letters, 87 (18). 183105pp. doi:10.1063/1.2123390
Kim, S. K., Xuan, Y., Ye, P. D., Mohammadi, S., Back, J. H., Shim, Moonsub (2007) Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors. Applied Physics Letters, 90 (16). 163108pp. doi:10.1063/1.2724904
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Guo, Chenglei, Tian, Zhen, Xiao, Yanjun, Mi, Qixi, Xue, Jiamin (2016) Field-effect transistors of high-mobility few-layer SnSe2. Applied Physics Letters, 109 (20). 203104pp. doi:10.1063/1.4967744
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