Lee, Tae-Yon, Yim, Sung-Soo, Lee, Dongbok, Lee, Min-Hyun, Ahn, Dong-Ho, Kim, Ki-Bum (2006) Separate domain formation in Ge2Sb2Te5–SiOx mixed layer. Applied Physics Letters, 89 (16). 163503pp. doi:10.1063/1.2362981
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Separate domain formation in Ge2Sb2Te5–SiOx mixed layer | ||
Journal | Applied Physics Letters | ||
Authors | Lee, Tae-Yon | Author | |
Yim, Sung-Soo | Author | ||
Lee, Dongbok | Author | ||
Lee, Min-Hyun | Author | ||
Ahn, Dong-Ho | Author | ||
Kim, Ki-Bum | Author | ||
Year | 2006 (October 16) | Volume | 89 |
Issue | 16 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.2362981Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8550167 | Long-form Identifier | mindat:1:5:8550167:0 |
GUID | 0 | ||
Full Reference | Lee, Tae-Yon, Yim, Sung-Soo, Lee, Dongbok, Lee, Min-Hyun, Ahn, Dong-Ho, Kim, Ki-Bum (2006) Separate domain formation in Ge2Sb2Te5–SiOx mixed layer. Applied Physics Letters, 89 (16). 163503pp. doi:10.1063/1.2362981 | ||
Plain Text | Lee, Tae-Yon, Yim, Sung-Soo, Lee, Dongbok, Lee, Min-Hyun, Ahn, Dong-Ho, Kim, Ki-Bum (2006) Separate domain formation in Ge2Sb2Te5–SiOx mixed layer. Applied Physics Letters, 89 (16). 163503pp. doi:10.1063/1.2362981 | ||
In | (2006, October) Applied Physics Letters Vol. 89 (16) AIP Publishing |
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