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Sankin, V. I., Shkrebiy, P. P., Yakimova, R. (2006) Wannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates. Applied Physics Letters, 89 (23). 233508pp. doi:10.1063/1.2402207

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Reference TypeJournal (article/letter/editorial)
TitleWannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates
JournalApplied Physics Letters
AuthorsSankin, V. I.Author
Shkrebiy, P. P.Author
Yakimova, R.Author
Year2006 (December 4)Volume89
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.2402207Search in ResearchGate
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Mindat Ref. ID8551195Long-form Identifiermindat:1:5:8551195:0
GUID0
Full ReferenceSankin, V. I., Shkrebiy, P. P., Yakimova, R. (2006) Wannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates. Applied Physics Letters, 89 (23). 233508pp. doi:10.1063/1.2402207
Plain TextSankin, V. I., Shkrebiy, P. P., Yakimova, R. (2006) Wannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates. Applied Physics Letters, 89 (23). 233508pp. doi:10.1063/1.2402207
In(2006, December) Applied Physics Letters Vol. 89 (23) AIP Publishing

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Sankin, V. I., Shkrebiy, P. P., Yakimova, R. (2009) Strong field hole transport in 6H-SiC. Applied Physics Letters, 94 (8). 82101pp. doi:10.1063/1.3089233
Sankin, Vladimir Ilich, Yakimova, Rositza (2006) Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC. Materials Science Forum, 527. 707-710 doi:10.4028/www.scientific.net/msf.527-529.707
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Andrianov, A. V., Gupta, J. P., Kolodzey, J., Sankin, V. I., Zakhar'in, A. O., Vasilyev, Yu. B. (2013) Current injection induced terahertz emission from 4H-SiC p-n junctions. Applied Physics Letters, 103 (22). 221101pp. doi:10.1063/1.4832824
Sankin, Vladimir Ilich, Shkrebiy, Pavel P., Lebedev, Alexander A. (2005) Wannier-Stark Localization Effects in 6H-SiC JFETs. Materials Science Forum, 483. 873-876 doi:10.4028/www.scientific.net/msf.483-485.873
Sankin, Vladimir Ilich, Andrianov, Alexander V., Petrov, A.G., Nagalyuk, Sergey S., Shkrebiy, Pavel P., Zacharin, A.O. (2017) New Efficient Canal of THz Emission from SiC Natural Superlattices in Conditions of Wannier-Stark Localization. Materials Science Forum, 897. 242-245 doi:10.4028/www.scientific.net/msf.897.242
Hassan, J., Henry, A., Ivanov, I. G., Bergman, J. P. (2009) In-grown stacking faults in 4H-SiC epilayers grown on off-cut substrates. Journal of Applied Physics, 105 (12). 123513pp. doi:10.1063/1.3139268
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