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Li, Guoqiang, Kim, Tae-Won, Inoue, Shigeru, Okamoto, Koichiro, Fujioka, Hiroshi (2006) Epitaxial growth of single-crystalline AlN films on tungsten substrates. Applied Physics Letters, 89 (24). 241905pp. doi:10.1063/1.2404588

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of single-crystalline AlN films on tungsten substrates
JournalApplied Physics Letters
AuthorsLi, GuoqiangAuthor
Kim, Tae-WonAuthor
Inoue, ShigeruAuthor
Okamoto, KoichiroAuthor
Fujioka, HiroshiAuthor
Year2006 (December 11)Volume89
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.2404588Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8551323Long-form Identifiermindat:1:5:8551323:1
GUID0
Full ReferenceLi, Guoqiang, Kim, Tae-Won, Inoue, Shigeru, Okamoto, Koichiro, Fujioka, Hiroshi (2006) Epitaxial growth of single-crystalline AlN films on tungsten substrates. Applied Physics Letters, 89 (24). 241905pp. doi:10.1063/1.2404588
Plain TextLi, Guoqiang, Kim, Tae-Won, Inoue, Shigeru, Okamoto, Koichiro, Fujioka, Hiroshi (2006) Epitaxial growth of single-crystalline AlN films on tungsten substrates. Applied Physics Letters, 89 (24). 241905pp. doi:10.1063/1.2404588
In(2006, December) Applied Physics Letters Vol. 89 (24) AIP Publishing

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Inoue, S., Okamoto, K., Matsuki, N., Kim, Tae-Won, Fujioka, H. (2006) Epitaxial growth of GaN on copper substrates. Applied Physics Letters, 88 (26). 261910pp. doi:10.1063/1.2213178
Kim, Tae-Won, Matsuki, N., Ohta, J., Fujioka, H. (2006) Epitaxial growth of AlN on single-crystal Ni(111) substrates. Applied Physics Letters, 88 (12). 121916pp. doi:10.1063/1.2186391
Li, Guoqiang, Ohta, Jitsuo, Kobayashi, Atsushi, Fujioka, Hiroshi (2006) Room-temperature epitaxial growth of AlN on atomically flat MgAl2O4 substrates. Applied Physics Letters, 89 (18). 182104pp. doi:10.1063/1.2372685
Inoue, S., Okamoto, K., Matsuki, N., Kim, Tae-Won, Fujioka, H. (2006) Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition. Journal of Crystal Growth, 289 (2). 574-577 doi:10.1016/j.jcrysgro.2005.12.072
Okamoto, Koichiro, Inoue, Shigeru, Nakano, Takayuki, Ohta, Jitsuo, Fujioka, Hiroshi (2009) Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers. Journal of Crystal Growth, 311 (5). 1311-1315 doi:10.1016/j.jcrysgro.2008.11.097
Hirata, S., Okamoto, K., Inoue, S., Kim, T-W., Ohta, J., Fujioka, H., Oshima, M. (2007) Epitaxial growth of AlN films on single-crystalline Ta substrates. Journal of Solid State Chemistry, 180. 2335-2339 doi:10.1016/j.jssc.2007.06.008
Okamoto, K., Inoue, S., Matsuki, N., Kim, T.-W., Ohta, J., Oshima, M., Fujioka, H., Ishii, A. (2008) Epitaxial growth of GaN films grown on single crystal Fe substrates. Applied Physics Letters, 93 (25). 251906pp. doi:10.1063/1.3056117
Inoue, S., Okamoto, K., Nakano, T., Ohta, J., Fujioka, H. (2007) Epitaxial growth of AlN films on Rh ultraviolet mirrors. Applied Physics Letters, 91 (13). 131910pp. doi:10.1063/1.2793187
Inoue, S., Okamoto, K., Nakano, T., Fujioka, H. (2006) Characteristics of single crystalline AlN films grown on Ru(0001) substrates. Journal of Crystal Growth, 297 (2). 317-320 doi:10.1016/j.jcrysgro.2006.09.051
Li, Guoqiang, Ohta, Jitsuo, Okamoto, Koichiro, Kobayashi, Atsushi, Fujioka, Hiroshi (2006) Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4Substrates by Pulsed-Laser Deposition. Japanese Journal of Applied Physics, 45. doi:10.1143/jjap.45.l457
Kim, Myunghee, Ohta, Jitsuo, Kobayashi, Atsushi, Fujioka, Hiroshi, Oshima, Masaharu (2007) Epitaxial growth mechanisms of AlN on SiC substrates at room temperature. Applied Physics Letters, 91 (15). 151903pp. doi:10.1063/1.2795804
 
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