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Ramani, K., Essary, C. R., Son, S. Y., Craciun, V., Singh, R. K. (2006) Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics. Applied Physics Letters, 89 (24). 242902pp. doi:10.1063/1.2404604

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Reference TypeJournal (article/letter/editorial)
TitleLow temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics
JournalApplied Physics Letters
AuthorsRamani, K.Author
Essary, C. R.Author
Son, S. Y.Author
Craciun, V.Author
Singh, R. K.Author
Year2006 (December 11)Volume89
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.2404604Search in ResearchGate
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Mindat Ref. ID8551331Long-form Identifiermindat:1:5:8551331:0
GUID0
Full ReferenceRamani, K., Essary, C. R., Son, S. Y., Craciun, V., Singh, R. K. (2006) Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics. Applied Physics Letters, 89 (24). 242902pp. doi:10.1063/1.2404604
Plain TextRamani, K., Essary, C. R., Son, S. Y., Craciun, V., Singh, R. K. (2006) Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics. Applied Physics Letters, 89 (24). 242902pp. doi:10.1063/1.2404604
In(2006, December) Applied Physics Letters Vol. 89 (24) AIP Publishing

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Essary, C. R., Ramani, K., Craciun, V., Singh, R. K. (2006) Improvement in electrical properties and thermal stability of low-temperature-processed Hf–Al–O gate dielectrics. Applied Physics Letters, 88 (18). 182902pp. doi:10.1063/1.2193046
Son, S. Y., Kumar, P., Lee, J. S., Singh, R. K. (2008) High efficiency nitrogen incorporation technique using ultraviolet assisted low temperature process for hafnia gate dielectric. Applied Physics Letters, 92 (9). 92906pp. doi:10.1063/1.2892040
Ramani, K., Essary, C.R., Craciun, V., Singh, R.K. (2007) UV assisted oxidation and nitridation of hafnia based thin films for alternate gate dielectric applications. Applied Surface Science, 253. 6493-6498 doi:10.1016/j.apsusc.2007.01.027
Howard, J. M., Craciun, V., Essary, C., Singh, R. K. (2002) Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si. Applied Physics Letters, 81 (18). 3431-3433 doi:10.1063/1.1517407
Son, S.Y., Jang, J.H., Kumar, P., Ramani, K., Craciun, V., Singh, R.K. (2008) UV assisted low temperature nitridation and post deposition oxidation technique for hafnium oxide gate dielectric. Applied Surface Science, 254. 7087-7091 doi:10.1016/j.apsusc.2008.05.222
Yamamoto, Y., Kita, K., Kyuno, K., Toriumi, A. (2006) Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator. Applied Physics Letters, 89 (3). 32903pp. doi:10.1063/1.2227630
Mahapatra, R., Maikap, S., Lee, Je-Hun, Kar, G. S., Dhar, A., Hwang, Nong-M., Kim, Doh-Y., Mathur, B. K., Ray, S. K. (2003) Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers. Applied Physics Letters, 82 (24). 4331-4333 doi:10.1063/1.1583143
Pan, Tung-Ming, Lee, Jian-Der, Shu, Wei-Hao, Chen, Tsung-Te (2006) Structural and electrical properties of neodymium oxide high-k gate dielectrics. Applied Physics Letters, 89 (23). 232908pp. doi:10.1063/1.2402237
Singh, R. K., Shen, Y., Gandikota, R., Carvalho, C., Rowell, J. M., Newman, N. (2008) Effect of oxygen incorporation on normal and superconducting properties of MgB2 films. Applied Physics Letters, 93 (24). 242504pp. doi:10.1063/1.3049618
Son, S. Y., Kumar, P., Cho, H., Min, K. J., Kang, C. J., Singh, R. K. (2008) An evaluation of thermal stability of TiB2 metal gate on Hf silicate for p-channel metal oxide semiconductor application. Applied Physics Letters, 92 (17). 172106pp. doi:10.1063/1.2913766
Herrero, A. M., Gila, B. P., Abernathy, C. R., Pearton, S. J., Craciun, V., Siebein, K., Ren, F. (2006) Epitaxial growth of Sc2O3 films on GaN. Applied Physics Letters, 89 (9). 92117pp. doi:10.1063/1.2270058
 
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