Benyagoub, A., Audren, A., Thomé, L., Garrido, F. (2006) Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide. Applied Physics Letters, 89 (24). 241914pp. doi:10.1063/1.2405410
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide | ||
Journal | Applied Physics Letters | ||
Authors | Benyagoub, A. | Author | |
Audren, A. | Author | ||
Thomé, L. | Author | ||
Garrido, F. | Author | ||
Year | 2006 (December 11) | Volume | 89 |
Issue | 24 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.2405410Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8551382 | Long-form Identifier | mindat:1:5:8551382:4 |
GUID | 0 | ||
Full Reference | Benyagoub, A., Audren, A., Thomé, L., Garrido, F. (2006) Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide. Applied Physics Letters, 89 (24). 241914pp. doi:10.1063/1.2405410 | ||
Plain Text | Benyagoub, A., Audren, A., Thomé, L., Garrido, F. (2006) Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide. Applied Physics Letters, 89 (24). 241914pp. doi:10.1063/1.2405410 | ||
In | (2006, December) Applied Physics Letters Vol. 89 (24) AIP Publishing |
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