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Chen, D. J., Tao, Y. Q., Chen, C., Zhang, R., Zheng, Y. D., Wang, M. J., Shen, B., Li, Z. H., Jiao, G., Chen, T. S. (2006) Improved transport properties of the two-dimensional electron gas in AlGaN∕GaN heterostructures by AlN surface passivation layer. Applied Physics Letters, 89 (25). 252104pp. doi:10.1063/1.2408657

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Reference TypeJournal (article/letter/editorial)
TitleImproved transport properties of the two-dimensional electron gas in AlGaN∕GaN heterostructures by AlN surface passivation layer
JournalApplied Physics Letters
AuthorsChen, D. J.Author
Tao, Y. Q.Author
Chen, C.Author
Zhang, R.Author
Zheng, Y. D.Author
Wang, M. J.Author
Shen, B.Author
Li, Z. H.Author
Jiao, G.Author
Chen, T. S.Author
Year2006 (December 18)Volume89
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.2408657Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8551472Long-form Identifiermindat:1:5:8551472:6
GUID0
Full ReferenceChen, D. J., Tao, Y. Q., Chen, C., Zhang, R., Zheng, Y. D., Wang, M. J., Shen, B., Li, Z. H., Jiao, G., Chen, T. S. (2006) Improved transport properties of the two-dimensional electron gas in AlGaN∕GaN heterostructures by AlN surface passivation layer. Applied Physics Letters, 89 (25). 252104pp. doi:10.1063/1.2408657
Plain TextChen, D. J., Tao, Y. Q., Chen, C., Zhang, R., Zheng, Y. D., Wang, M. J., Shen, B., Li, Z. H., Jiao, G., Chen, T. S. (2006) Improved transport properties of the two-dimensional electron gas in AlGaN∕GaN heterostructures by AlN surface passivation layer. Applied Physics Letters, 89 (25). 252104pp. doi:10.1063/1.2408657
In(2006, December) Applied Physics Letters Vol. 89 (25) AIP Publishing

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Chen, D. J., Zhang, K. X., Tao, Y. Q., Wu, X. S., Xu, J., Zhang, R., Zheng, Y. D., Shen, B. (2006) Temperature-dependent strain relaxation of the AlGaN barrier in AlGaN∕GaN heterostructures with and without Si3N4 surface passivation. Applied Physics Letters, 88 (10). 102106pp. doi:10.1063/1.2186369
He, X. W., Shen, B., Tang, Y. Q., Tang, N., Yin, C. M., Xu, F. J., Yang, Z. J., Zhang, G. Y., Chen, Y. H., Tang, C. G., Wang, Z. G. (2007) Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1−xN∕GaN heterostructures under uniaxial strain. Applied Physics Letters, 91 (7). 71912pp. doi:10.1063/1.2768918
Zheng, Z. W., Shen, B., Jiang, C. P., Gui, Y. S., Someya, T., Zhang, R., Shi, Y., Zheng, Y. D., Guo, S. L., Chu, J. H., Arakawa, Y. (2003) Multisubband transport of the two-dimensional electron gas in AlxGa1−xN/GaN heterostructures. Journal of Applied Physics, 93 (3). 1651-1655 doi:10.1063/1.1536720
Huang, Y., Chen, D. J., Lu, H., Shi, H. B., Han, P., Zhang, R., Zheng, Y. D. (2010) Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors. Applied Physics Letters, 96 (24). 243503pp. doi:10.1063/1.3453871
Tang, N., Shen, B., Zheng, Z. W., Liu, J., Chen, D. J., Lu, J., Zhang, R., Shi, Y., Zheng, Y. D., Gui, Y. S., Jiang, C. P., Qiu, Z. J., Guo, S. L., Chu, J. H., Hoshino, K., Someya, T., Arakawa, Y. (2003) Magnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures. Journal of Applied Physics, 94 (8). 5420pp. doi:10.1063/1.1606507
Zheng, Z. W., Shen, B., Gui, Y. S., Jiang, C. P., Tang, N., Zhang, R., Shi, Y., Zheng, Y. D., Guo, S. L., Zheng, G. Z., Chu, J. H., Someya, T., Arakawa, Y. (2003) Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1−xN/GaN heterointerfaces. Applied Physics Letters, 82 (12). 1872-1874 doi:10.1063/1.1557772
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Feng, Z. H., Zhou, Y. G., Cai, S. J., Lau, Kei May (2004) Enhanced thermal stability of the two-dimensional electron gas in GaN∕AlGaN∕GaN heterostructures by Si3N4 surface-passivation-induced strain solidification. Applied Physics Letters, 85 (22). 5248-5250 doi:10.1063/1.1828231
Hong, D. S., Zhang, H., Zhang, H. R., Zhang, J., Wang, S. F., Chen, Y. S., Shen, B. G., Sun, J. R. (2016) One dimensional electron gas at the LaAlO3/SrTiO3 interface and its transport properties. Applied Physics Letters, 109 (17). 173505pp. doi:10.1063/1.4966546
Chen, C., Chen, D.J., Xie, Z.L., Han, P., Zhang, R., Zheng, Y.D., Li, Z.H., Jiao, G., Chen, T.S. (2008) Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN heterostructures. Applied Physics A, 90. 447-449 doi:10.1007/s00339-007-4301-5
Jiao, Q. Q., Chen, Z. Z., Feng, Y. L., Zhang, S., Li, S. F., Jiang, S. X., Li, J. Z., Chen, Y. F., Yu, T. J., Kang, X. N., Gu, E., Shen, B., Zhang, G. Y. (2017) Modification of far-field radiation pattern by shaping InGaN/GaN nanorods. Applied Physics Letters, 110 (5). 52103pp. doi:10.1063/1.4975203
 
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