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Barba, D., Martin, F., Dahmoune, C., Ross, G. G. (2006) Effects of oxide layer thickness on Si-nanocrystal photoluminescence intensity in Si+-implanted SiO2∕Si systems. Applied Physics Letters, 89 (3). 34107pp. doi:10.1063/1.2234739

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Reference TypeJournal (article/letter/editorial)
TitleEffects of oxide layer thickness on Si-nanocrystal photoluminescence intensity in Si+-implanted SiO2∕Si systems
JournalApplied Physics Letters
AuthorsBarba, D.Author
Martin, F.Author
Dahmoune, C.Author
Ross, G. G.Author
Year2006 (July 17)Volume89
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.2234739Search in ResearchGate
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Mindat Ref. ID8551810Long-form Identifiermindat:1:5:8551810:2
GUID0
Full ReferenceBarba, D., Martin, F., Dahmoune, C., Ross, G. G. (2006) Effects of oxide layer thickness on Si-nanocrystal photoluminescence intensity in Si+-implanted SiO2∕Si systems. Applied Physics Letters, 89 (3). 34107pp. doi:10.1063/1.2234739
Plain TextBarba, D., Martin, F., Dahmoune, C., Ross, G. G. (2006) Effects of oxide layer thickness on Si-nanocrystal photoluminescence intensity in Si+-implanted SiO2∕Si systems. Applied Physics Letters, 89 (3). 34107pp. doi:10.1063/1.2234739
In(2006, July) Applied Physics Letters Vol. 89 (3) AIP Publishing

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Ross, G.G., Barba, D., Dahmoune, C., Wang, Y.Q., Martin, F. (2007) Effect of implanted Si concentration on the Si nanocrystal size and emitted PL spectrum. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 256 (1). 211-215 doi:10.1016/j.nimb.2006.12.005
Barba, D., Dahmoune, C., Martin, F., Ross, G. G. (2009) Optical index profile of nonuniform depth-distributed silicon nanocrystals within SiO2. Journal of Applied Physics, 105 (1). 13521pp. doi:10.1063/1.3041155
Barba, D., Demarche, J., Martin, F., Terwagne, G., Ross, G. G. (2013) Control of the Ge nanocrystal synthesis by co-implantation of Si+. Journal of Applied Physics, 114 (7). 74306pp. doi:10.1063/1.4817667
Ross, G.G., Barba, D., Dahmoune, C., Wang, Y.Q., Martin, F. (2007) Erratum to “Effect of implanted Si concentration on the Si nanocrystal size and emitted PL spectrum” [Nucl. Instr. and Meth. B 256 (2007) 211]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 259 (2). 1004pp. doi:10.1016/j.nimb.2007.03.080
Qin, G. G., Wang, Y. Q., Qiao, Y. P., Zhang, B. R., Ma, Z. C., Zong, W. H. (1999) Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures. Applied Physics Letters, 74 (15). 2182-2184 doi:10.1063/1.123794
Lacombe, A., Beaudoin, F., Koshel, D., Barba, D., Martin, F., Ross, G. G. (2009) Photoluminescence intensity modulation by charge carrier injection in silicon nanocrystals at room temperature. Applied Physics Letters, 94 (1). 12112pp. doi:10.1063/1.3067864
Dahmoune, C., Barba, D., Martin, F., Ross, G.G. (2012) Influence of implantation parameters on the depth distribution of emitting Si-nc. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 272. 112-115 doi:10.1016/j.nimb.2011.01.044
Shimizu‐Iwayama, Tsutomu, Nakao, Setsuo, Saitoh, Kazuo (1994) Visible photoluminescence in Si+‐implanted thermal oxide films on crystalline Si. Applied Physics Letters, 65 (14). 1814-1816 doi:10.1063/1.112852
Koshel, D., Barba, D., Martin, F., Ross, G. G. (2010) Photodeterioration of the silicon nanocrystal emission. Journal of Applied Physics, 108 (5). 53101pp. doi:10.1063/1.3475791
Shcheglov, K. V., Yang, C. M., Vahala, K. J., Atwater, Harry A. (1995) Electroluminescence and photoluminescence of Ge‐implanted Si/SiO2/Si structures. Applied Physics Letters, 66 (6). 745-747 doi:10.1063/1.114080
Kim, H. B., Kim, T. G., Son, J. H., Whang, C. N., Chae, K. H., Lee, W. S., Im, S., Song, J. H. (2000) Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers. Journal of Applied Physics, 88 (4). 1851-1854 doi:10.1063/1.1305909
 
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