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Hsieh, Tung-Po, Chiu, Pei-Chin, Chyi, Jen-Inn, Chang, Hsiang-Szu, Chen, Wen-Yen, Hsu, Tzu Min, Chang, Wen-Hao (2006) Enhancing luminescence efficiency of InAs quantum dots at 1.5μm using a carrier blocking layer. Applied Physics Letters, 89 (5). 53110pp. doi:10.1063/1.2245374

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Reference TypeJournal (article/letter/editorial)
TitleEnhancing luminescence efficiency of InAs quantum dots at 1.5μm using a carrier blocking layer
JournalApplied Physics Letters
AuthorsHsieh, Tung-PoAuthor
Chiu, Pei-ChinAuthor
Chyi, Jen-InnAuthor
Chang, Hsiang-SzuAuthor
Chen, Wen-YenAuthor
Hsu, Tzu MinAuthor
Chang, Wen-HaoAuthor
Year2006 (July 31)Volume89
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.2245374Search in ResearchGate
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Mindat Ref. ID8552019Long-form Identifiermindat:1:5:8552019:8
GUID0
Full ReferenceHsieh, Tung-Po, Chiu, Pei-Chin, Chyi, Jen-Inn, Chang, Hsiang-Szu, Chen, Wen-Yen, Hsu, Tzu Min, Chang, Wen-Hao (2006) Enhancing luminescence efficiency of InAs quantum dots at 1.5μm using a carrier blocking layer. Applied Physics Letters, 89 (5). 53110pp. doi:10.1063/1.2245374
Plain TextHsieh, Tung-Po, Chiu, Pei-Chin, Chyi, Jen-Inn, Chang, Hsiang-Szu, Chen, Wen-Yen, Hsu, Tzu Min, Chang, Wen-Hao (2006) Enhancing luminescence efficiency of InAs quantum dots at 1.5μm using a carrier blocking layer. Applied Physics Letters, 89 (5). 53110pp. doi:10.1063/1.2245374
In(2006, July) Applied Physics Letters Vol. 89 (5) AIP Publishing

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Hsieh, Tung-Po, Chyi, Jen-Inn, Chang, Hsiang-Szu, Chen, Wen-Yen, Hsu, Tzu Min, Chang, Wen-Hao (2007) Single photon emission from an InGaAs quantum dot precisely positioned on a nanoplane. Applied Physics Letters, 90 (7). 73105pp. doi:10.1063/1.2644093
Chang, Hsiang-Szu, Chen, Wen-Yen, Hsu, Tzu-Min, Hsieh, Tung-Po, Chyi, Jen-Inn, Chang, Wen-Hao (2009) Origins of nonzero multiple photon emission probability from single quantum dots embedded in photonic crystal nanocavities. Applied Physics Letters, 94 (16). 163111pp. doi:10.1063/1.3125222
Hsieh, Tung-Po, Chiu, Pei-Chin, Chyi, Jen-Inn, Yeh, Nien-Tze, Ho, Wen-Jeng, Chang, Wen-Hao, Hsu, Tzu-Min (2005) 1.55μm emission from InAs quantum dots grown on GaAs. Applied Physics Letters, 87 (15). 151903pp. doi:10.1063/1.2099536
Chang, Wen-Hao, Chen, Wen-Yen, Chang, Hsiang-Szu, Hsieh, Tung-Po, Chyi, Jen-Inn, Hsu, Tzu-Min (2006) Efficient Single-Photon Sources Based on Low-Density Quantum Dots in Photonic-Crystal Nanocavities. Physical Review Letters, 96 (11). doi:10.1103/physrevlett.96.117401
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Liu, Wei-Sheng, Kuo, David M. T., Chyi, Jen-Inn, Chen, Wen-Yen, Chang, Hsing-Szu, Hsu, Tzu-Min (2006) Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer. Applied Physics Letters, 89 (24). 243103pp. doi:10.1063/1.2405872
Hsu, Wei-Ting, Liao, Yu-An, Hsu, Feng-Chang, Chiu, Pei-Chin, Chyi, Jen-Inn, Chang, Wen-Hao (2011) Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots. Applied Physics Letters, 99 (7). 73108pp. doi:10.1063/1.3624464
Chang, Wen-Hao, Liao, Yu-An, Hsu, Wei-Ting, Lee, Ming-Chih, Chiu, Pei-Chin, Chyi, Jen-Inn (2008) Carrier dynamics of type-II InAs∕GaAs quantum dots covered by a thin GaAs1−xSbx layer. Applied Physics Letters, 93 (3). 33107pp. doi:10.1063/1.2964191
Liao, Yu-An, Hsu, Wei-Ting, Huang, Shih-Han, Chiu, Pei-Chin, Chyi, Jen-Inn, Chang, Wen-Hao (2013) Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer. Applied Physics Letters, 102 (17). 173104pp. doi:10.1063/1.4803013
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Liao, Yu-An, Hsu, Wei-Ting, Chiu, Pei-Chin, Chyi, Jen-Inn, Chang, Wen-Hao (2009) Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots. Applied Physics Letters, 94 (5). 53101pp. doi:10.1063/1.3062979
 
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