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Ostinelli, O., Bächtold, W., Haiml, H., Grange, R., Keller, U., Gini, E., Almuneau, G. (2006) Carrier lifetime reduction in 1.5μm AlGaAsSb saturable absorbers with air and AlAsSb barriers. Applied Physics Letters, 89 (7). 71114pp. doi:10.1063/1.2240742

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Reference TypeJournal (article/letter/editorial)
TitleCarrier lifetime reduction in 1.5μm AlGaAsSb saturable absorbers with air and AlAsSb barriers
JournalApplied Physics Letters
AuthorsOstinelli, O.Author
Bächtold, W.Author
Haiml, H.Author
Grange, R.Author
Keller, U.Author
Gini, E.Author
Almuneau, G.Author
Year2006 (August 14)Volume89
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2240742Search in ResearchGate
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Mindat Ref. ID8552212Long-form Identifiermindat:1:5:8552212:3
GUID0
Full ReferenceOstinelli, O., Bächtold, W., Haiml, H., Grange, R., Keller, U., Gini, E., Almuneau, G. (2006) Carrier lifetime reduction in 1.5μm AlGaAsSb saturable absorbers with air and AlAsSb barriers. Applied Physics Letters, 89 (7). 71114pp. doi:10.1063/1.2240742
Plain TextOstinelli, O., Bächtold, W., Haiml, H., Grange, R., Keller, U., Gini, E., Almuneau, G. (2006) Carrier lifetime reduction in 1.5μm AlGaAsSb saturable absorbers with air and AlAsSb barriers. Applied Physics Letters, 89 (7). 71114pp. doi:10.1063/1.2240742
In(2006, August) Applied Physics Letters Vol. 89 (7) AIP Publishing

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Ostinelli, O., Haiml, M., Grange, R., Almuneau, G., Ebnöther, M., Gini, E., Müller, E., Keller, U., Bächtold, W. (2006) Highly reflective AlGaAsSb/InP Bragg reflector at 1.55μm grown by MOVPE. Journal of Crystal Growth, 286 (2). 247-254 doi:10.1016/j.jcrysgro.2005.09.026
Grange, R., Rutz, A., Liverini, V., Haiml, M., Schön, S., Keller, U. (2005) Nonlinear absorption edge properties of 1.3-μm GaInNAs saturable absorbers. Applied Physics Letters, 87 (13). 132103pp. doi:10.1063/1.2058216
Haiml, M., Grange, R., Keller, U. (2004) Optical characterization of semiconductor saturable absorbers. Applied Physics B, 79 (3). 331-339 doi:10.1007/s00340-004-1535-1
Grange, R., Haiml, M., Paschotta, R., Spühler, G.J., Krainer, L., Golling, M., Ostinelli, O., Keller, U. (2005) New regime of inverse saturable absorption for self-stabilizing passively mode-locked lasers. Applied Physics B, 80 (2). 151-158 doi:10.1007/s00340-004-1622-3
Liverini, V., Schön, S., Grange, R., Haiml, M., Zeller, S. C., Keller, U. (2004) Low-loss GaInNAs saturable absorber mode locking a 1.3-μm solid-state laser. Applied Physics Letters, 84 (20). 4002-4004 doi:10.1063/1.1748841
Rutz, A., Liverini, V., Grange, R., Haiml, M., Schön, S., Keller, U. (2007) Parameter tunable GaInNAs saturable absorbers for mode locking of solid-state lasers. Journal of Crystal Growth, 301. 570-574 doi:10.1016/j.jcrysgro.2006.11.260
Fluck, R., Häring, R., Paschotta, R., Gini, E., Melchior, H., Keller, U. (1998) Eyesafe pulsed microchip laser using semiconductor saturable absorber mirrors. Applied Physics Letters, 72 (25). 3273-3275 doi:10.1063/1.121621
Tan, H. H., Jagadish, C., Lederer, M. J., Luther-Davies, B., Zou, J., Cockayne, D. J. H., Haiml, M., Siegner, U., Keller, U. (1999) Role of implantation-induced defects on the response time of semiconductor saturable absorbers. Applied Physics Letters, 75 (10). 1437-1439 doi:10.1063/1.124718
Schön, S., Haiml, M., Keller, U. (2000) Ultrabroadband AIGaAs/CaF2 semiconductor saturable absorber mirrors. Applied Physics Letters, 77 (6). 782-784 doi:10.1063/1.1306917
Spühler, G. J., Reffert, S., Haiml, M., Moser, M., Keller, U. (2001) Output-coupling semiconductor saturable absorber mirror. Applied Physics Letters, 78 (18). 2733-2735 doi:10.1063/1.1370122
Spühler, G. J., Weingarten, K. J., Grange, R., Krainer, L., Haiml, M., Liverini, V., Golling, M., Schön, S., Keller, U. (2005) Semiconductor saturable absorber mirror structures with low saturation fluence. Applied Physics B, 81 (1). 27-32 doi:10.1007/s00340-005-1879-1
 
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