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Shchekin, O. B., Epler, J. E., Trottier, T. A., Margalith, T., Steigerwald, D. A., Holcomb, M. O., Martin, P. S., Krames, M. R. (2006) High performance thin-film flip-chip InGaN–GaN light-emitting diodes. Applied Physics Letters, 89 (7). 71109pp. doi:10.1063/1.2337007

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Reference TypeJournal (article/letter/editorial)
TitleHigh performance thin-film flip-chip InGaN–GaN light-emitting diodes
JournalApplied Physics Letters
AuthorsShchekin, O. B.Author
Epler, J. E.Author
Trottier, T. A.Author
Margalith, T.Author
Steigerwald, D. A.Author
Holcomb, M. O.Author
Martin, P. S.Author
Krames, M. R.Author
Year2006 (August 14)Volume89
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2337007Search in ResearchGate
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Mindat Ref. ID8552275Long-form Identifiermindat:1:5:8552275:2
GUID0
Full ReferenceShchekin, O. B., Epler, J. E., Trottier, T. A., Margalith, T., Steigerwald, D. A., Holcomb, M. O., Martin, P. S., Krames, M. R. (2006) High performance thin-film flip-chip InGaN–GaN light-emitting diodes. Applied Physics Letters, 89 (7). 71109pp. doi:10.1063/1.2337007
Plain TextShchekin, O. B., Epler, J. E., Trottier, T. A., Margalith, T., Steigerwald, D. A., Holcomb, M. O., Martin, P. S., Krames, M. R. (2006) High performance thin-film flip-chip InGaN–GaN light-emitting diodes. Applied Physics Letters, 89 (7). 71109pp. doi:10.1063/1.2337007
In(2006, August) Applied Physics Letters Vol. 89 (7) AIP Publishing

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