Losurdo, Maria, Giangregorio, Maria M., Bruno, Giovanni, Kim, Tong-Ho, Wu, Pae, Choi, Soojeong, Brown, April, Masia, F., Capizzi, M., Polimeni, A. (2007) Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy. Applied Physics Letters, 90 (1). 11910pp. doi:10.1063/1.2424664
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy | ||
Journal | Applied Physics Letters | ||
Authors | Losurdo, Maria | Author | |
Giangregorio, Maria M. | Author | ||
Bruno, Giovanni | Author | ||
Kim, Tong-Ho | Author | ||
Wu, Pae | Author | ||
Choi, Soojeong | Author | ||
Brown, April | Author | ||
Masia, F. | Author | ||
Capizzi, M. | Author | ||
Polimeni, A. | Author | ||
Year | 2007 (January) | Volume | 90 |
Issue | 1 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.2424664Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8552588 | Long-form Identifier | mindat:1:5:8552588:3 |
GUID | 0 | ||
Full Reference | Losurdo, Maria, Giangregorio, Maria M., Bruno, Giovanni, Kim, Tong-Ho, Wu, Pae, Choi, Soojeong, Brown, April, Masia, F., Capizzi, M., Polimeni, A. (2007) Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy. Applied Physics Letters, 90 (1). 11910pp. doi:10.1063/1.2424664 | ||
Plain Text | Losurdo, Maria, Giangregorio, Maria M., Bruno, Giovanni, Kim, Tong-Ho, Wu, Pae, Choi, Soojeong, Brown, April, Masia, F., Capizzi, M., Polimeni, A. (2007) Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy. Applied Physics Letters, 90 (1). 11910pp. doi:10.1063/1.2424664 | ||
In | (2007, January) Applied Physics Letters Vol. 90 (1) AIP Publishing |
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