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Liu, W., Zhu, J. J., Jiang, D. S., Yang, H., Wang, J. F. (2007) Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111). Applied Physics Letters, 90 (1). 11914pp. doi:10.1063/1.2430396

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)
JournalApplied Physics Letters
AuthorsLiu, W.Author
Zhu, J. J.Author
Jiang, D. S.Author
Yang, H.Author
Wang, J. F.Author
Year2007 (January)Volume90
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.2430396Search in ResearchGate
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Mindat Ref. ID8552654Long-form Identifiermindat:1:5:8552654:5
GUID0
Full ReferenceLiu, W., Zhu, J. J., Jiang, D. S., Yang, H., Wang, J. F. (2007) Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111). Applied Physics Letters, 90 (1). 11914pp. doi:10.1063/1.2430396
Plain TextLiu, W., Zhu, J. J., Jiang, D. S., Yang, H., Wang, J. F. (2007) Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111). Applied Physics Letters, 90 (1). 11914pp. doi:10.1063/1.2430396
In(2007, January) Applied Physics Letters Vol. 90 (1) AIP Publishing

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Liu, W, Wang, J F, Zhu, J J, Jiang, D S, Yang, H (2007) Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer. Journal of Physics D: Applied Physics, 40. 5252-5255 doi:10.1088/0022-3727/40/17/036
Wang, J. F., Yao, D. Z., Chen, J., Zhu, J. J., Zhao, D. G., Jiang, D. S., Yang, H., Liang, J. W. (2006) Strain evolution in GaN layers grown on high-temperature AlN interlayers. Applied Physics Letters, 89 (15). 152105pp. doi:10.1063/1.2360900
Zhao, D. G., Jiang, D. S., Zhu, J. J., Liu, Z. S., Zhang, S. M., Liang, J. W., Yang, Hui, Li, X., Li, X. Y., Gong, H. M. (2007) Influence of defects in n−-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors. Applied Physics Letters, 90 (6). 62106pp. doi:10.1063/1.2450658
Lu, Y., Cong, G. W., Liu, X. L., Lu, D. C., Wang, Z. G., Wu, M. F. (2004) Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling. Applied Physics Letters, 85 (23). 5562-5564 doi:10.1063/1.1830679
Elhamri, S., Mitchel, W. C., Mitchell, W. D., Landis, G. R., Berney, R., Saxler, A. (2007) Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC. Applied Physics Letters, 90 (4). 42112pp. doi:10.1063/1.2432300
Meng, W. J., Perry, T. A. (1994) Strain effects in epitaxial GaN grown on AlN‐buffered Si(111). Journal of Applied Physics, 76 (12). 7824-7828 doi:10.1063/1.357916
Kim, Deok Kyu (2010) Influence of the thickness of the 1st GaN layer under a low-temperature AlN interlayer on the properties of GaN layer grown on Si (111). Journal of Crystal Growth, 312 (3). 478-481 doi:10.1016/j.jcrysgro.2009.11.033
Tang, H., Baribeau, J.-M., Aers, G.C., Fraser, J., Rolfe, S., Bardwell, J.A. (2011) Role of buried cracks in mitigating strain in crack free GaN grown on Si (111) employing AlN interlayer schemes. Journal of Crystal Growth, 323 (1). 413-417 doi:10.1016/j.jcrysgro.2010.11.063
Sun, Q., Huang, Y., Wang, H., Chen, J., Jin, R. Q., Zhang, S. M., Yang, H., Jiang, D. S., Jahn, U., Ploog, K. H. (2005) Lateral phase separation in AlGaN grown on GaN with a high-temperature AlN interlayer. Applied Physics Letters, 87 (12). 121914pp. doi:10.1063/1.2056588
Zhao, D. G., Zhu, J. J., Liu, Z. S., Zhang, S. M., Yang, Hui, Jiang, D. S. (2004) Surface morphology of AlN buffer layer and its effect on GaN growthby metalorganic chemical vapor deposition. Applied Physics Letters, 85 (9). 1499-1501 doi:10.1063/1.1784034
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