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Emadi, T. A., Bryllert, T., Sadeghi, M., Vukusic, J., Stake, J. (2007) Optimum barrier thickness study for the InGaAs∕InAlAs∕AlAs heterostructure barrier varactor diodes. Applied Physics Letters, 90 (1). 12108pp. doi:10.1063/1.2430632

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Reference TypeJournal (article/letter/editorial)
TitleOptimum barrier thickness study for the InGaAs∕InAlAs∕AlAs heterostructure barrier varactor diodes
JournalApplied Physics Letters
AuthorsEmadi, T. A.Author
Bryllert, T.Author
Sadeghi, M.Author
Vukusic, J.Author
Stake, J.Author
Year2007 (January)Volume90
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.2430632Search in ResearchGate
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Mindat Ref. ID8552675Long-form Identifiermindat:1:5:8552675:8
GUID0
Full ReferenceEmadi, T. A., Bryllert, T., Sadeghi, M., Vukusic, J., Stake, J. (2007) Optimum barrier thickness study for the InGaAs∕InAlAs∕AlAs heterostructure barrier varactor diodes. Applied Physics Letters, 90 (1). 12108pp. doi:10.1063/1.2430632
Plain TextEmadi, T. A., Bryllert, T., Sadeghi, M., Vukusic, J., Stake, J. (2007) Optimum barrier thickness study for the InGaAs∕InAlAs∕AlAs heterostructure barrier varactor diodes. Applied Physics Letters, 90 (1). 12108pp. doi:10.1063/1.2430632
In(2007, January) Applied Physics Letters Vol. 90 (1) AIP Publishing

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Fu, Y., Dillner, L., Stake, J., Willander, M., Kollberg, E. L. (1998) Capacitance analysis for AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactor diodes. Journal of Applied Physics, 83 (3). 1457-1462 doi:10.1063/1.366850
Stake, Jan, Malko, Aleksandra, Bryllert, Tomas, Vukusic, Josip (2017) Status and Prospects of High-Power Heterostructure Barrier Varactor Frequency Multipliers. Proceedings of the IEEE, 105. 1008-1019 doi:10.1109/jproc.2016.2646761
Fu, Y., Stake, J., Dillner, L., Willander, M., Kollberg, E. L. (1997) AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactors. Journal of Applied Physics, 82 (11). 5568-5572 doi:10.1063/1.366461
Reklaitis, A. (2009) Efficient heterostructure doped-barrier varactor diodes. Journal of Applied Physics, 105 (2). 24502pp. doi:10.1063/1.3068193
Lee, Jung Hee, Chiang, Jung-Chi, Li, Sheng S., Kannam, P. J. (1999) An AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector operating at 3.4 μm and 205 K. Applied Physics Letters, 74 (5). 765-767 doi:10.1063/1.123304
Ouacha, A., Willander, M., Brugger, H., Meiners, U. (1995) Influence of the barrier thickness on the noise performance of AlAs/GaAs/AlAs double barrier resonant tunneling diodes. Journal of Applied Physics, 77 (11). 6026-6030 doi:10.1063/1.359187
Broekaert, T. P. E., Randall, J. N., Beam III, E. A., Jovanovic, D., Seabaugh, A. C., Smith, B. D. (1996) Functional InP/InGaAs lateral double barrier heterostructure resonant tunneling diodes by using etch and regrowth. Applied Physics Letters, 69 (13). 1918-1920 doi:10.1063/1.117621
Chin, V. W. L., Egan, R. J., Osotchan, T., Vaughan, M. R., Anderson, S. C. (1996) Noncontact thickness and composition assessment of a strained AlGaAs/AlAs/InGaAs double barrier multiple quantum well structure. Journal of Applied Physics, 80 (4). 2521-2523 doi:10.1063/1.363036
Reed, M. A., Lee, J. W. (1987) Resonant tunneling in a GaAs/AlGaAs barrier/InGaAs quantum well heterostructure. Applied Physics Letters, 50 (13). 845-847 doi:10.1063/1.98009
Nakagawa, T., Fujita, T., Matsumoto, Y., Kojima, T., Ohta, K. (1987) Resonant tunneling of holes in AlAs/GaAs triple barrier diodes. Applied Physics Letters, 50 (15). 974-976 doi:10.1063/1.98003
Cheng, Peng, Harris, James S. (1989) Effect of Si doping in AlAs barrier layers of AlAs‐GaAs‐AlAs double‐barrier resonant tunneling diodes. Applied Physics Letters, 55 (6). 572-574 doi:10.1063/1.101836
 
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