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Luisier, Mathieu, Schenk, Andreas, Fichtner, Wolfgang (2007) Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations. Applied Physics Letters, 90 (10). 102103pp. doi:10.1063/1.2711275

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Reference TypeJournal (article/letter/editorial)
TitleAtomistic treatment of interface roughness in Si nanowire transistors with different channel orientations
JournalApplied Physics Letters
AuthorsLuisier, MathieuAuthor
Schenk, AndreasAuthor
Fichtner, WolfgangAuthor
Year2007 (March 5)Volume90
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2711275Search in ResearchGate
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Mindat Ref. ID8552719Long-form Identifiermindat:1:5:8552719:1
GUID0
Full ReferenceLuisier, Mathieu, Schenk, Andreas, Fichtner, Wolfgang (2007) Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations. Applied Physics Letters, 90 (10). 102103pp. doi:10.1063/1.2711275
Plain TextLuisier, Mathieu, Schenk, Andreas, Fichtner, Wolfgang (2007) Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations. Applied Physics Letters, 90 (10). 102103pp. doi:10.1063/1.2711275
In(2007, March) Applied Physics Letters Vol. 90 (10) AIP Publishing

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Luisier, Mathieu, Schenk, Andreas, Fichtner, Wolfgang (2006) Quantum transport in two- and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism. Journal of Applied Physics, 100 (4). 43713pp. doi:10.1063/1.2244522
Luisier, Mathieu, Schenk, Andreas (2008) Atomistic Simulation of Nanowire Transistors. Journal of Computational and Theoretical Nanoscience, 5 (6). 1031-1045 doi:10.1166/jctn.2008.2539
Rhyner, Reto, Luisier, Mathieu (2017) Influence of thermal losses at the gate contact of Si nanowire transistors: A phenomenological treatment in quantum transport theory. Applied Physics Letters, 110 (10). 103508pp. doi:10.1063/1.4978516
Luisier, Mathieu, Schenk, Andreas, Fichtner, Wolfgang, Klimeck, Gerhard (2006) Atomistic simulation of nanowires in thesp3d5s*tight-binding formalism: From boundary conditions to strain calculations. Physical Review B, 74 (20) doi:10.1103/physrevb.74.205323
Kim, Sung Geun, Luisier, Mathieu, Boykin, Timothy B., Klimeck, Gerhard (2011) Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors. Applied Physics Letters, 99 (23). 232107pp. doi:10.1063/1.3665939
Rhyner, Reto, Luisier, Mathieu (2014) Influence of anharmonic phonon decay on self-heating in Si nanowire transistors. Applied Physics Letters, 105 (6). 62113pp. doi:10.1063/1.4893378
Ueda, Akiko, Luisier, Mathieu, Sano, Nobuyuki (2015) Enhanced impurity-limited mobility in ultra-scaled Si nanowire junctionless field-effect transistors. Applied Physics Letters, 107 (25). 253501pp. doi:10.1063/1.4937901
Luisier, Mathieu (2011) Phonon-limited and effective low-field mobility in n- and p-type [100]-, [110]-, and [111]-oriented Si nanowire transistors. Applied Physics Letters, 98 (3). 32111pp. doi:10.1063/1.3540689
Luisier, Mathieu, Klimeck, Gerhard (2009) Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness. Applied Physics Letters, 94 (22). 223505pp. doi:10.1063/1.3140505
Rhyner, Reto, Luisier, Mathieu (2014) Atomistic modeling of coupled electron-phonon transport in nanowire transistors. Physical Review B, 89 (23) doi:10.1103/physrevb.89.235311
Khomyakov, Petr A., Luisier, Mathieu, Schenk, Andreas (2015) Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: A first-principles study. Applied Physics Letters, 107 (6). 62104pp. doi:10.1063/1.4928539
 
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