Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Tuomisto, F., Paskova, T., Kröger, R., Figge, S., Hommel, D., Monemar, B., Kersting, R. (2007) Defect distribution in a-plane GaN on Al2O3. Applied Physics Letters, 90 (12). 121915pp. doi:10.1063/1.2715128

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleDefect distribution in a-plane GaN on Al2O3
JournalApplied Physics Letters
AuthorsTuomisto, F.Author
Paskova, T.Author
Kröger, R.Author
Figge, S.Author
Hommel, D.Author
Monemar, B.Author
Kersting, R.Author
Year2007 (March 19)Volume90
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.2715128Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553014Long-form Identifiermindat:1:5:8553014:0
GUID0
Full ReferenceTuomisto, F., Paskova, T., Kröger, R., Figge, S., Hommel, D., Monemar, B., Kersting, R. (2007) Defect distribution in a-plane GaN on Al2O3. Applied Physics Letters, 90 (12). 121915pp. doi:10.1063/1.2715128
Plain TextTuomisto, F., Paskova, T., Kröger, R., Figge, S., Hommel, D., Monemar, B., Kersting, R. (2007) Defect distribution in a-plane GaN on Al2O3. Applied Physics Letters, 90 (12). 121915pp. doi:10.1063/1.2715128
In(2007, March) Applied Physics Letters Vol. 90 (12) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Kröger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A., Monemar, B. (2007) Interfacial structure of a-plane GaN grown on r-plane sapphire. Applied Physics Letters, 90 (8). 81918pp. doi:10.1063/1.2696309
Kröger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A., Monemar, B. (2007) Erratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90, 081918 (2007)]. Applied Physics Letters, 90 (24). 249901pp. doi:10.1063/1.2744473
Tuomisto, F., Paskova, T., Figge, S., Hommel, D., Monemar, B. (2007) Vacancy defect distribution in heteroepitaxial -plane GaN grown by hydride vapor phase epitaxy. Journal of Crystal Growth, 300 (1). 251-253 doi:10.1016/j.jcrysgro.2006.11.040
Kröger, R., Paskova, T., Monemar, B., Figge, S., Hommel, D., Rosenauer, A. (2007) Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire. physica status solidi (c), 4 (7). 2564-2567 doi:10.1002/pssc.200674909
Figge, S., Böttcher, T., Dennemarck, J., Kröger, R., Paskova, T., Monemar, B., Hommel, D. (2005) Optoelectronic devices on bulk GaN. Journal of Crystal Growth, 281 (1). 101-106 doi:10.1016/j.jcrysgro.2005.03.017
Paskov, P.P., Schifano, R., Paskova, T., Malinauskas, T., Bergman, J.P., Monemar, B., Figge, S., Hommel, D. (2006) Structural defect-related emissions in nonpolar a-plane GaN. Physica B: Condensed Matter, 376. 473-476 doi:10.1016/j.physb.2005.12.121
Paskov, P. P., Schifano, R., Monemar, B., Paskova, T., Figge, S., Hommel, D. (2005) Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition. Journal of Applied Physics, 98 (9). 93519pp. doi:10.1063/1.2128496
Paskova, T., Kroeger, R., Figge, S., Hommel, D., Darakchieva, V., Monemar, B., Preble, E., Hanser, A., Williams, N. M., Tutor, M. (2006) High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire. Applied Physics Letters, 89 (5). 51914pp. doi:10.1063/1.2236901
Roder, C., Einfeldt, S., Figge, S., Paskova, T., Hommel, D., Paskov, P. P., Monemar, B., Behn, U., Haskell, B. A., Fini, P. T., Nakamura, S. (2006) Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates. Journal of Applied Physics, 100 (10). 103511pp. doi:10.1063/1.2386940
Roder, C., Einfeldt, S., Figge, S., Hommel, D., Paskova, T., Monemar, B., Haskell, B. A., Fini, P. T., Speck, J. S., Nakamura, S. (2006) Strain ina-plane GaN layers grown onr-plane sapphire substrates. physica status solidi (a), 203 (7). 1672-1675 doi:10.1002/pssa.200565447
Paskov, P. P., Schifano, R., Malinauskas, T., Paskova, T., Bergman, J. P., Monemar, B., Figge, S., Hommel, D., Haskell, B. A., Fini, P. T., Speck, J. S., Nakamura, S. (2006) Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers. physica status solidi (c), 3 (6). 1499-1502 doi:10.1002/pssc.200565416
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 31, 2025 05:08:16
Go to top of page