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Ryu, Y. R., Lubguban, J. A., Lee, T. S., White, H. W., Jeong, T. S., Youn, C. J., Kim, B. J. (2007) Excitonic ultraviolet lasing in ZnO-based light emitting devices. Applied Physics Letters, 90 (13). 131115pp. doi:10.1063/1.2718516

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Reference TypeJournal (article/letter/editorial)
TitleExcitonic ultraviolet lasing in ZnO-based light emitting devices
JournalApplied Physics Letters
AuthorsRyu, Y. R.Author
Lubguban, J. A.Author
Lee, T. S.Author
White, H. W.Author
Jeong, T. S.Author
Youn, C. J.Author
Kim, B. J.Author
Year2007 (March 26)Volume90
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.2718516Search in ResearchGate
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Mindat Ref. ID8553181Long-form Identifiermindat:1:5:8553181:1
GUID0
Full ReferenceRyu, Y. R., Lubguban, J. A., Lee, T. S., White, H. W., Jeong, T. S., Youn, C. J., Kim, B. J. (2007) Excitonic ultraviolet lasing in ZnO-based light emitting devices. Applied Physics Letters, 90 (13). 131115pp. doi:10.1063/1.2718516
Plain TextRyu, Y. R., Lubguban, J. A., Lee, T. S., White, H. W., Jeong, T. S., Youn, C. J., Kim, B. J. (2007) Excitonic ultraviolet lasing in ZnO-based light emitting devices. Applied Physics Letters, 90 (13). 131115pp. doi:10.1063/1.2718516
In(2007, March) Applied Physics Letters Vol. 90 (13) AIP Publishing

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Ryu, Y. R., Lee, T. S., Lubguban, J. A., White, H. W., Park, Y. S., Youn, C. J. (2005) ZnO devices: Photodiodes and p-type field-effect transistors. Applied Physics Letters, 87 (15). 153504pp. doi:10.1063/1.2089176
Ryu, Y. R., Lee, T. S., Lubguban, J. A., Corman, A. B., White, H. W., Leem, J. H., Han, M. S., Park, Y. S., Youn, C. J., Kim, W. J. (2006) Wide-band gap oxide alloy: BeZnO. Applied Physics Letters, 88 (5). 52103pp. doi:10.1063/1.2168040
Ryu, Yungryel, Lee, Tae-Seok, Lubguban, Jorge A., White, Henry W., Kim, Bong-Jin, Park, Yoon-Soo, Youn, Chang-Joo (2006) Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes. Applied Physics Letters, 88 (24). 241108pp. doi:10.1063/1.2210452
Kim, B. J., Ryu, Y. R., Lee, T. S., White, H. W. (2009) Output power enhancement of GaN light emitting diodes with p-type ZnO hole injection layer. Applied Physics Letters, 94 (10). 103506pp. doi:10.1063/1.3097243
Lee, S. W., Oh, D. C., Goto, H., Ha, J. S., Lee, H. J., Hanada, T., Cho, M. W., Yao, T., Hong, S. K., Lee, H. Y., Cho, S. R., Choi, J. W., Choi, J. H., Jang, J. H., Shin, J. E., Lee, J. S. (2006) Origin of forward leakage current in GaN-based light-emitting devices. Applied Physics Letters, 89 (13). 132117pp. doi:10.1063/1.2357930
Zapien, J. A., Liu, Y. K., Shan, Y. Y., Tang, H., Lee, C. S., Lee, S. T. (2007) Continuous near-infrared-to-ultraviolet lasing from II-VI nanoribbons. Applied Physics Letters, 90 (21). 213114pp. doi:10.1063/1.2736286
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Lee, Y. J., Lin, P. C., Lu, T. C., Kuo, H. C., Wang, S. C. (2007) Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes. Applied Physics Letters, 90 (16). 161115pp. doi:10.1063/1.2722672
Klingshirn, Claus, Fallert, Johannes, Zhou, Huijuan, Kalt, Heinz (2007) Comment on “Excitonic ultraviolett lasing in ZnO-based light emitting devices” [Appl. Phys. Lett. 90, 131115 (2007)]. Applied Physics Letters, 91 (12). 126101pp. doi:10.1063/1.2786585
Heo, J. N., Lee, J. H., Jeong, T. W., Lee, C. S., Kim, W. S., Jin, Y. W., Kim, J. M., Yu, SeGi, Yi, W. K., Park, S. H., Oh, T. S., Yoo, J. B. (2005) Electron emission from carbon nanotube-dispersed MgO layer. Applied Physics Letters, 87 (11). 114105pp. doi:10.1063/1.2048814
 
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