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Buyanova, I. A., Chen, W. M., Izadifard, M., Pearton, S. J., Bihler, C., Brandt, M. S., Hong, Y. G., Tu, C. W. (2007) Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?. Applied Physics Letters, 90 (2). 21920pp. doi:10.1063/1.2425006

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?
JournalApplied Physics Letters
AuthorsBuyanova, I. A.Author
Chen, W. M.Author
Izadifard, M.Author
Pearton, S. J.Author
Bihler, C.Author
Brandt, M. S.Author
Hong, Y. G.Author
Tu, C. W.Author
Year2007 (January 8)Volume90
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2425006Search in ResearchGate
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Mindat Ref. ID8554009Long-form Identifiermindat:1:5:8554009:5
GUID0
Full ReferenceBuyanova, I. A., Chen, W. M., Izadifard, M., Pearton, S. J., Bihler, C., Brandt, M. S., Hong, Y. G., Tu, C. W. (2007) Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?. Applied Physics Letters, 90 (2). 21920pp. doi:10.1063/1.2425006
Plain TextBuyanova, I. A., Chen, W. M., Izadifard, M., Pearton, S. J., Bihler, C., Brandt, M. S., Hong, Y. G., Tu, C. W. (2007) Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?. Applied Physics Letters, 90 (2). 21920pp. doi:10.1063/1.2425006
In(2007, January) Applied Physics Letters Vol. 90 (2) AIP Publishing

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Buyanova, I. A., Izadifard, M., Chen, W. M., Polimeni, A., Capizzi, M., Xin, H. P., Tu, C. W. (2003) Hydrogen-induced improvements in optical quality of GaNAs alloys. Applied Physics Letters, 82 (21). 3662-3664 doi:10.1063/1.1578513
Buyanova, I.A., Izadifard, M., Seppänen, T., Birch, J., Chen, W.M., Pearton, S.J., Polimeni, A., Capizzi, M., Brandt, M.S., Bihler, C., Hong, Y.G., Tu, C.W. (2006) Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys. Physica B: Condensed Matter, 376. 568-570 doi:10.1016/j.physb.2005.12.143
Izadifard, M., Bergman, J. P., Chen, W. M., Buyanova, I. A., Hong, Y. G., Tu, C. W. (2006) Radiative recombination of GaInNP alloys lattice matched to GaAs. Applied Physics Letters, 88 (1). 11919pp. doi:10.1063/1.2161118
Buyanova, I. A., Izadifard, M., Chen, W. M., Hong, Y. G., Tu, C. W. (2006) Modeling of band gap properties of GaInNP alloys lattice matched to GaAs. Applied Physics Letters, 88 (3). 31907pp. doi:10.1063/1.2164433
Vorona, I. P., Mchedlidze, T., Izadifard, M., Buyanova, I. A., Chen, W. M., Hong, Y. G., Xin, H. P., Tu, C. W. (2005) Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate. Applied Physics Letters, 86 (22). 222110pp. doi:10.1063/1.1943487
Thinh, N. Q., Vorona, I. P., Izadifard, M., Buyanova, I. A., Chen, W. M., Hong, Y. G., Xin, H. P., Tu, C. W. (2004) Formation of Ga interstitials in (Al,In)yGa1−yNxP1−x alloys and their role in carrier recombination. Applied Physics Letters, 85 (14). 2827-2829 doi:10.1063/1.1803918
Dobrovolsky, A., Sukrittanon, S., Kuang, Y. J., Tu, C. W., Chen, W. M., Buyanova, I. A. (2014) Raman spectroscopy of GaP/GaNP core/shell nanowires. Applied Physics Letters, 105 (19). 193102pp. doi:10.1063/1.4901446
Dagnelund, D., Vorona, I. P., Nosenko, G., Wang, X. J., Tu, C. W., Yonezu, H., Polimeni, A., Capizzi, M., Chen, W. M., Buyanova, I. A (2012) Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study. Journal of Applied Physics, 111 (2). 23501pp. doi:10.1063/1.3676576
Izadifard, M., Mtchedlidze, T., Vorona, I., Chen, W. M., Buyanova, I. A., Hong, Y. G., Tu, C. W. (2005) Band alignment in GaInNP∕GaAs heterostructures grown by gas-source molecular-beam epitaxy. Applied Physics Letters, 86 (26). 261904pp. doi:10.1063/1.1952586
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Dobrovolsky, A., Stehr, J. E., Chen, S. L., Kuang, Y. J., Sukrittanon, S., Tu, C. W., Chen, W. M., Buyanova, I. A. (2012) Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires. Applied Physics Letters, 101 (16). 163106pp. doi:10.1063/1.4760273
 
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