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Tian, W., Haeni, J. H., Schlom, D. G., Hutchinson, E., Sheu, B. L., Rosario, M. M., Schiffer, P., Liu, Y., Zurbuchen, M. A., Pan, X. Q. (2007) Epitaxial growth and magnetic properties of the first five members of the layered Srn+1RunO3n+1 oxide series. Applied Physics Letters, 90 (2). 22507pp. doi:10.1063/1.2430941

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth and magnetic properties of the first five members of the layered Srn+1RunO3n+1 oxide series
JournalApplied Physics Letters
AuthorsTian, W.Author
Haeni, J. H.Author
Schlom, D. G.Author
Hutchinson, E.Author
Sheu, B. L.Author
Rosario, M. M.Author
Schiffer, P.Author
Liu, Y.Author
Zurbuchen, M. A.Author
Pan, X. Q.Author
Year2007 (January 8)Volume90
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2430941Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8554065Long-form Identifiermindat:1:5:8554065:1
GUID0
Full ReferenceTian, W., Haeni, J. H., Schlom, D. G., Hutchinson, E., Sheu, B. L., Rosario, M. M., Schiffer, P., Liu, Y., Zurbuchen, M. A., Pan, X. Q. (2007) Epitaxial growth and magnetic properties of the first five members of the layered Srn+1RunO3n+1 oxide series. Applied Physics Letters, 90 (2). 22507pp. doi:10.1063/1.2430941
Plain TextTian, W., Haeni, J. H., Schlom, D. G., Hutchinson, E., Sheu, B. L., Rosario, M. M., Schiffer, P., Liu, Y., Zurbuchen, M. A., Pan, X. Q. (2007) Epitaxial growth and magnetic properties of the first five members of the layered Srn+1RunO3n+1 oxide series. Applied Physics Letters, 90 (2). 22507pp. doi:10.1063/1.2430941
In(2007, January) Applied Physics Letters Vol. 90 (2) AIP Publishing

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Haeni, J. H., Theis, C. D., Schlom, D. G., Tian, W., Pan, X. Q., Chang, H., Takeuchi, I., Xiang, X.-D. (2001) Epitaxial growth of the first five members of the Srn+1TinO3n+1 Ruddlesden–Popper homologous series. Applied Physics Letters, 78 (21). 3292-3294 doi:10.1063/1.1371788
Ihlefeld, J. F., Kumar, A., Gopalan, V., Schlom, D. G., Chen, Y. B., Pan, X. Q., Heeg, T., Schubert, J., Ke, X., Schiffer, P., Orenstein, J., Martin, L. W., Chu, Y. H., Ramesh, R. (2007) Adsorption-controlled molecular-beam epitaxial growth of BiFeO3. Applied Physics Letters, 91 (7). 71922pp. doi:10.1063/1.2767771
Tian, W., Jiang, J. C., Pan, X. Q., Haeni, J. H., Li, Y. L., Chen, L. Q., Schlom, D. G., Neaton, J. B., Rabe, K. M., Jia, Q. X. (2006) Structural evidence for enhanced polarization in a commensurate short-period BaTiO3∕SrTiO3 superlattice. Applied Physics Letters, 89 (9). 92905pp. doi:10.1063/1.2335367
Sun, H. P., Tian, W., Pan, X. Q., Haeni, J. H., Schlom, D. G. (2004) Evolution of dislocation arrays in epitaxial BaTiO3 thin films grown on (100) SrTiO3. Applied Physics Letters, 84 (17). 3298-3300 doi:10.1063/1.1728300
Tian, W., Pan, X. Q., Haeni, J. H., Schlom, D. G. (2001) Transmission electron microscopy study of n= 1–5 Srn+1TinO3n+1 epitaxial thin films. Journal of Materials Research, 16 (7) 2013-2026 doi:10.1557/jmr.2001.0276
Liu, B. T., Maki, K., So, Y., Nagarajan, V., Ramesh, R., Lettieri, J., Haeni, J. H., Schlom, D. G., Tian, W., Pan, X. Q., Walker, F. J., McKee, R. A. (2002) Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon. Applied Physics Letters, 80 (25). 4801-4803 doi:10.1063/1.1484552
Jia, Y., Zurbuchen, M. A., Wozniak, S., Carim, A. H., Schlom, D. G., Zou, L-N., Briczinski, S., Liu, Y. (1999) Epitaxial growth of metastable Ba2RuO4 films with the K2NiF4 structure. Applied Physics Letters, 74 (25). 3830-3832 doi:10.1063/1.124194
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Bu, S. D., Kim, D. M., Choi, J. H., Giencke, J., Hellstrom, E. E., Larbalestier, D. C., Patnaik, S., Cooley, L., Eom, C. B., Lettieri, J., Schlom, D. G., Tian, W., Pan, X. Q. (2002) Synthesis and properties of c-axis oriented epitaxial MgB2 thin films. Applied Physics Letters, 81 (10). 1851-1853 doi:10.1063/1.1504490
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Sun, H. P., Pan, X. Q., Haeni, J. H., Schlom, D. G. (2004) Structural evolution of dislocation half-loops in epitaxial BaTiO3 thin films during high-temperature annealing. Applied Physics Letters, 85 (11). 1967-1969 doi:10.1063/1.1789233
 
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