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Himcinschi, C., Singh, R., Radu, I., Milenin, A. P., Erfurth, W., Reiche, M., Gösele, U., Christiansen, S. H., Muster, F., Petzold, M. (2007) Strain relaxation in nanopatterned strained silicon round pillars. Applied Physics Letters, 90 (2). 21902pp. doi:10.1063/1.2431476

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Reference TypeJournal (article/letter/editorial)
TitleStrain relaxation in nanopatterned strained silicon round pillars
JournalApplied Physics Letters
AuthorsHimcinschi, C.Author
Singh, R.Author
Radu, I.Author
Milenin, A. P.Author
Erfurth, W.Author
Reiche, M.Author
Gösele, U.Author
Christiansen, S. H.Author
Muster, F.Author
Petzold, M.Author
Year2007 (January 8)Volume90
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2431476Search in ResearchGate
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Mindat Ref. ID8554095Long-form Identifiermindat:1:5:8554095:2
GUID0
Full ReferenceHimcinschi, C., Singh, R., Radu, I., Milenin, A. P., Erfurth, W., Reiche, M., Gösele, U., Christiansen, S. H., Muster, F., Petzold, M. (2007) Strain relaxation in nanopatterned strained silicon round pillars. Applied Physics Letters, 90 (2). 21902pp. doi:10.1063/1.2431476
Plain TextHimcinschi, C., Singh, R., Radu, I., Milenin, A. P., Erfurth, W., Reiche, M., Gösele, U., Christiansen, S. H., Muster, F., Petzold, M. (2007) Strain relaxation in nanopatterned strained silicon round pillars. Applied Physics Letters, 90 (2). 21902pp. doi:10.1063/1.2431476
In(2007, January) Applied Physics Letters Vol. 90 (2) AIP Publishing

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Himcinschi, C., Reiche, M., Scholz, R., Christiansen, S. H., Gösele, U. (2007) Compressive uniaxially strained silicon on insulator by prestrained wafer bonding and layer transfer. Applied Physics Letters, 90 (23). 231909pp. doi:10.1063/1.2747182
Moutanabbir, O., Reiche, M., Erfurth, W., Naumann, F., Petzold, M., Gösele, U. (2009) The complex evolution of strain during nanoscale patterning of 60 nm thick strained silicon layer directly on insulator. Applied Physics Letters, 94 (24). 243113pp. doi:10.1063/1.3157134
Singh, R., Radu, I., Reiche, M., Himcinschi, C., Kuck, B., Tillack, B., Gösele, U., Christiansen, S.H. (2007) High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applications. Applied Surface Science, 253. 3595-3599 doi:10.1016/j.apsusc.2006.07.077
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Singh, R., Radu, I., Scholz, R., Himcinschi, C., Gösele, U., Christiansen, S.H. (2006) Investigation of helium implantation induced blistering in InP. Journal of Luminescence, 121 (2) 379-382 doi:10.1016/j.jlumin.2006.08.073
Moutanabbir, O., Reiche, M., Hähnel, A., Erfurth, W., Motohashi, M., Tarun, A., Hayazawa, N., Kawata, S. (2010) UV-Raman imaging of the in-plane strain in single ultrathin strained silicon-on-insulator patterned structure. Applied Physics Letters, 96 (23). 233105pp. doi:10.1063/1.3449135
Radu, I., Singh, R., Scholz, R., Gösele, U., Christiansen, S., Brüderl, G., Eichler, C., Härle, V. (2006) Formation of nanovoids in high-dose hydrogen implanted GaN. Applied Physics Letters, 89 (3). 31912pp. doi:10.1063/1.2221526
Moutanabbir, O., Reiche, M., Hähnel, A., Oehme, M., Kasper, E. (2010) Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator. Applied Physics Letters, 97 (5). 53105pp. doi:10.1063/1.3475399
Singh, R., Radu, I., Gösele, U., Christiansen, S. H. (2006) Investigation of hydrogen implantation induced blistering in GaN. physica status solidi (c), 3 (6). 1754-1757 doi:10.1002/pssc.200565441
Tong, Q.‐Y., Schmidt, E., Gösele, U., Reiche, M. (1994) Hydrophobic silicon wafer bonding. Applied Physics Letters, 64 (5). 625-627 doi:10.1063/1.111070
Taylor, W. J., Tan, T. Y., Gösele, U. M. (1991) Oxygen precipitation in silicon: The role of strain and self‐interstitials. Applied Physics Letters, 59 (16). 2007-2009 doi:10.1063/1.106136
 
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