Xi, Y. A., Chen, K. X., Mont, F. W., Kim, J. K., Lee, W., Schubert, E. F., Liu, W., Li, X., Smart, J. A. (2007) Erratum: “Kinetic study of Al-mole fraction in AlxGa1−xN grown on c-plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy” [Appl. Phys. Lett. 90, 051104 (2007)]. Applied Physics Letters, 90 (20). 209902pp. doi:10.1063/1.2737824

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Reference Type	Journal (article/letter/editorial)
Title	Erratum: “Kinetic study of Al-mole fraction in AlxGa1−xN grown on c-plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy” [Appl. Phys. Lett. 90, 051104 (2007)]
Journal	Applied Physics Letters
Authors	Xi, Y. A.		Author
	Chen, K. X.		Author
	Mont, F. W.		Author
	Kim, J. K.		Author
	Lee, W.		Author
	Schubert, E. F.		Author
	Liu, W.		Author
	Li, X.		Author
	Smart, J. A.		Author
Year	2007 (May 14)	Volume	90
Issue	20
Publisher	AIP Publishing
DOI	doi:10.1063/1.2737824Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8554118	Long-form Identifier	mindat:1:5:8554118:2
GUID	0
Full Reference	Xi, Y. A., Chen, K. X., Mont, F. W., Kim, J. K., Lee, W., Schubert, E. F., Liu, W., Li, X., Smart, J. A. (2007) Erratum: “Kinetic study of Al-mole fraction in AlxGa1−xN grown on c-plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy” [Appl. Phys. Lett. 90, 051104 (2007)]. Applied Physics Letters, 90 (20). 209902pp. doi:10.1063/1.2737824
Plain Text	Xi, Y. A., Chen, K. X., Mont, F. W., Kim, J. K., Lee, W., Schubert, E. F., Liu, W., Li, X., Smart, J. A. (2007) Erratum: “Kinetic study of Al-mole fraction in AlxGa1−xN grown on c-plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy” [Appl. Phys. Lett. 90, 051104 (2007)]. Applied Physics Letters, 90 (20). 209902pp. doi:10.1063/1.2737824
In	(2007, May) Applied Physics Letters Vol. 90 (20) AIP Publishing

	Xi, Y. A., Chen, K. X., Mont, F. W., Kim, J. K., Lee, W., Schubert, E. F., Liu, W., Li, X., Smart, J. A. (2007) Kinetic study of Al-mole fraction in AlxGa1−xN grown on c-plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy. Applied Physics Letters, 90 (5). 51104pp. doi:10.1063/1.2437681
	Xi, Y. A., Chen, K. X., Mont, F., Kim, J. K., Wetzel, C., Schubert, E. F., Liu, W., Li, X., Smart, J. A. (2006) Very high quality AlN grown on (0001) sapphire by metal-organic vapor phase epitaxy. Applied Physics Letters, 89 (10). 103106pp. doi:10.1063/1.2345256
	Chen, K. X., Xi, Y. A., Mont, F. W., Kim, J. K., Schubert, E. F., Liu, W., Li, X., Smart, J. A. (2007) Recombination dynamics in ultraviolet light-emitting diodes with Si-doped AlxGa1−xN∕AlyGa1−yN multiple quantum well active regions. Journal of Applied Physics, 101 (11). 113102pp. doi:10.1063/1.2736312
	Kim, J. K., Waldron, E. L., Li, Y.-L., Gessmann, Th., Schubert, E. F., Jang, H. W., Lee, J.-L. (2004) P-type conductivity in bulk AlxGa1−xN and AlxGa1−xN/AlyGa1−yN superlattices with average Al mole fraction >20%. Applied Physics Letters, 84 (17). 3310-3312 doi:10.1063/1.1728322
	Hums, C., Bläsing, J., Dadgar, A., Diez, A., Hempel, T., Christen, J., Krost, A., Lorenz, K., Alves, E. (2007) Erratum: “Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range” [Appl. Phys. Lett. 90, 022105 (2007)]. Applied Physics Letters, 91 (13). 139901pp. doi:10.1063/1.2785981
	Su, W. S., Chen, Y. F., Hsiao, C. L., Tu, L. W. (2007) Erratum: “Generation of electricity in GaN nanorods induced by piezoelectric effect” [Appl. Phys. Lett. 90, 063110 (2007)]. Applied Physics Letters, 90 (17). 179901pp. doi:10.1063/1.2731432
	Xi, Y.A., Chen, K.X., Mont, F., Kim, J.K., Schubert, E.F., Liu, W., Li, X., Smart, J.A. (2007) Comparative study of n-type AlGaN grown on sapphire by using a superlattice layer and a low-temperature AlN interlayer. Journal of Crystal Growth, 299 (1). 59-62 doi:10.1016/j.jcrysgro.2006.10.253
	Xiu, F. X., Liu, J. L. (2007) Response to “Comment on ‘Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy’” [Appl. Phys. Lett. 90, 116102 (2007)]. Applied Physics Letters, 90 (11). 116103pp. doi:10.1063/1.2713174
	Kröger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A., Monemar, B. (2007) Erratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90, 081918 (2007)]. Applied Physics Letters, 90 (24). 249901pp. doi:10.1063/1.2744473
	Chen, K. X., Dai, Q., Lee, W., Kim, J. K., Schubert, E. F., Liu, W., Wu, S., Li, X., Smart, J. A. (2007) Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaN. Applied Physics Letters, 91 (12). 121110pp. doi:10.1063/1.2786838
	Al Tahtamouni, T. M., Sedhain, A., Lin, J. Y., Jiang, H. X. (2007) Growth and photoluminescence studies of a-plane AlN∕AlxGa1−xN quantum wells. Applied Physics Letters, 90 (22). 221105pp. doi:10.1063/1.2743956

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