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Suet, Z., Paul, D. J., Zhang, J., Turner, S. G. (2007) Si∕SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning. Applied Physics Letters, 90 (20). 203501pp. doi:10.1063/1.2739089

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Reference TypeJournal (article/letter/editorial)
TitleSi∕SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning
JournalApplied Physics Letters
AuthorsSuet, Z.Author
Paul, D. J.Author
Zhang, J.Author
Turner, S. G.Author
Year2007 (May 14)Volume90
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.2739089Search in ResearchGate
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Mindat Ref. ID8554139Long-form Identifiermindat:1:5:8554139:5
GUID0
Full ReferenceSuet, Z., Paul, D. J., Zhang, J., Turner, S. G. (2007) Si∕SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning. Applied Physics Letters, 90 (20). 203501pp. doi:10.1063/1.2739089
Plain TextSuet, Z., Paul, D. J., Zhang, J., Turner, S. G. (2007) Si∕SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning. Applied Physics Letters, 90 (20). 203501pp. doi:10.1063/1.2739089
In(2007, May) Applied Physics Letters Vol. 90 (20) AIP Publishing

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