Pozina, G., Hemmingsson, C., Bergman, J. P., Trinh, D., Hultman, L., Monemar, B. (2007) Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy. Applied Physics Letters, 90 (22). 221904pp. doi:10.1063/1.2743950

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Reference Type	Journal (article/letter/editorial)
Title	Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy
Journal	Applied Physics Letters
Authors	Pozina, G.		Author
	Hemmingsson, C.		Author
	Bergman, J. P.		Author
	Trinh, D.		Author
	Hultman, L.		Author
	Monemar, B.		Author
Year	2007 (May 28)	Volume	90
Issue	22
Publisher	AIP Publishing
DOI	doi:10.1063/1.2743950Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8554356	Long-form Identifier	mindat:1:5:8554356:0
GUID	0
Full Reference	Pozina, G., Hemmingsson, C., Bergman, J. P., Trinh, D., Hultman, L., Monemar, B. (2007) Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy. Applied Physics Letters, 90 (22). 221904pp. doi:10.1063/1.2743950
Plain Text	Pozina, G., Hemmingsson, C., Bergman, J. P., Trinh, D., Hultman, L., Monemar, B. (2007) Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy. Applied Physics Letters, 90 (22). 221904pp. doi:10.1063/1.2743950
In	(2007, May) Applied Physics Letters Vol. 90 (22) AIP Publishing

	Khromov, S., Hemmingsson, C., Monemar, B., Hultman, L., Pozina, G. (2014) Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy. Journal of Applied Physics, 116 (22). 223503pp. doi:10.1063/1.4903819
	*Pozina, G., Bergman, J. P., Paskova, T., Monemar, B. (1999) Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy. Applied Physics Letters, 75 (26). 4124-4126 doi:10.1063/1.125557*
	Pozina, G., Paskov, P. P., Bergman, J. P., Hemmingsson, C., Hultman, L., Monemar, B., Amano, H., Akasaki, I., Usui, A. (2007) Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates. Applied Physics Letters, 91 (22). 221901pp. doi:10.1063/1.2809407
	Pozina, G., Bergman, J. P., Monemar, B., Yamaguchi, S., Amano, H., Akasaki, I. (2000) Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant. Applied Physics Letters, 76 (23). 3388-3390 doi:10.1063/1.126655
	Pozina, G., Bergman, J.P., Paskova, T., Monemar, B. (1999) Dynamics of the Bound Excitons in GaN Epilayers Grown by Hydride Vapor Phase Epitaxy. physica status solidi (b), 216 (1). 45-49 doi:10.1002/(sici)1521-3951(199911)216:1<45::aid-pssb45>3.0.co;2-0
	Pozina, G., Khromov, S., Hemmingsson, C., Hultman, L., Monemar, B. (2011) Effect of silicon and oxygen doping on donor bound excitons in bulk GaN. Physical Review B, 84 (16) doi:10.1103/physrevb.84.165213
	Pozina, G., Bergman, J. P., Monemar, B., Iwaya, M., Nitta, S., Amano, H., Akasaki, I. (2000) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport. Applied Physics Letters, 77 (11). 1638-1640 doi:10.1063/1.1310175
	Duc, Tran Thien, Pozina, Galia, Son, Nguyen Tien, Janzén, Erik, Ohshima, Takeshi, Hemmingsson, Carl (2014) Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy. Applied Physics Letters, 105 (10). 102103pp. doi:10.1063/1.4895390
	Pozina, G., Hemmingsson, C., Paskov, P. P., Bergman, J. P., Monemar, B., Kawashima, T., Amano, H., Akasaki, I., Usui, A. (2008) Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates. Applied Physics Letters, 92 (15). 151904pp. doi:10.1063/1.2909541
	*Pozina, G., Hemmingsson, C., Amano, H., Monemar, B. (2013) Surface potential effect on excitons in AlGaN/GaN quantum well structures. Applied Physics Letters, 102 (8). 82110pp. doi:10.1063/1.4793568*
	Duc, Tran Thien, Pozina, Galia, Janzén, Erik, Hemmingsson, Carl (2013) Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy. Journal of Applied Physics, 114 (15). 153702pp. doi:10.1063/1.4825052

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Pozina, G., Hemmingsson, C., Bergman, J. P., Trinh, D., Hultman, L., Monemar, B. (2007) Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy. Applied Physics Letters, 90 (22). 221904pp. doi:10.1063/1.2743950

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