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Pantha, B. N., Dahal, R., Nakarmi, M. L., Nepal, N., Li, J., Lin, J. Y., Jiang, H. X., Paduano, Q. S., Weyburne, David (2007) Correlation between optoelectronic and structural properties and epilayer thickness of AlN. Applied Physics Letters, 90 (24). 241101pp. doi:10.1063/1.2747662

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Reference TypeJournal (article/letter/editorial)
TitleCorrelation between optoelectronic and structural properties and epilayer thickness of AlN
JournalApplied Physics Letters
AuthorsPantha, B. N.Author
Dahal, R.Author
Nakarmi, M. L.Author
Nepal, N.Author
Li, J.Author
Lin, J. Y.Author
Jiang, H. X.Author
Paduano, Q. S.Author
Weyburne, DavidAuthor
Year2007 (June 11)Volume90
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.2747662Search in ResearchGate
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Mindat Ref. ID8554532Long-form Identifiermindat:1:5:8554532:8
GUID0
Full ReferencePantha, B. N., Dahal, R., Nakarmi, M. L., Nepal, N., Li, J., Lin, J. Y., Jiang, H. X., Paduano, Q. S., Weyburne, David (2007) Correlation between optoelectronic and structural properties and epilayer thickness of AlN. Applied Physics Letters, 90 (24). 241101pp. doi:10.1063/1.2747662
Plain TextPantha, B. N., Dahal, R., Nakarmi, M. L., Nepal, N., Li, J., Lin, J. Y., Jiang, H. X., Paduano, Q. S., Weyburne, David (2007) Correlation between optoelectronic and structural properties and epilayer thickness of AlN. Applied Physics Letters, 90 (24). 241101pp. doi:10.1063/1.2747662
In(2007, June) Applied Physics Letters Vol. 90 (24) AIP Publishing

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Pantha, B. N., Nepal, N., Al Tahtamouni, T. M., Nakarmi, M. L., Li, J., Lin, J. Y., Jiang, H. X. (2007) Correlation between biaxial stress and free exciton transition in AlN epilayers. Applied Physics Letters, 91 (12). 121117pp. doi:10.1063/1.2789182
Nakarmi, M. L., Nepal, N., Ugolini, C., Altahtamouni, T. M., Lin, J. Y., Jiang, H. X. (2006) Correlation between optical and electrical properties of Mg-doped AlN epilayers. Applied Physics Letters, 89 (15). 152120pp. doi:10.1063/1.2362582
Nepal, N., Nakarmi, M. L., Nam, K. B., Lin, J. Y., Jiang, H. X. (2004) Acceptor-bound exciton transition in Mg-doped AlN epilayer. Applied Physics Letters, 85 (12). 2271-2273 doi:10.1063/1.1796521
Pantha, B. N., Sedhain, A., Li, J., Lin, J. Y., Jiang, H. X. (2010) Probing the relationship between structural and optical properties of Si-doped AlN. Applied Physics Letters, 96 (13). 131906pp. doi:10.1063/1.3374444
Pantha, B. N., Dahal, R., Li, J., Lin, J. Y., Jiang, H. X., Pomrenke, G. (2008) Thermoelectric properties of InxGa1−xN alloys. Applied Physics Letters, 92 (4). 42112pp. doi:10.1063/1.2839309
Li, J., Fan, Z. Y., Dahal, R., Nakarmi, M. L, Lin, J. Y., Jiang, H. X. (2006) 200nm deep ultraviolet photodetectors based on AlN. Applied Physics Letters, 89 (21). 213510pp. doi:10.1063/1.2397021
Nepal, N., Nam, K. B., Nakarmi, M. L., Lin, J. Y., Jiang, H. X., Zavada, J. M., Wilson, R. G. (2004) Optical properties of the nitrogen vacancy in AlN epilayers. Applied Physics Letters, 84 (7). 1090-1092 doi:10.1063/1.1648137
Nepal, N., Shakya, J., Nakarmi, M. L., Lin, J. Y., Jiang, H. X. (2006) Deep ultraviolet photoluminescence studies of AlN photonic crystals. Applied Physics Letters, 88 (13). 133113pp. doi:10.1063/1.2190452
Nepal, N., Nam, K. B., Li, J., Nakarmi, M. L., Lin, J. Y., Jiang, H. X. (2006) Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy. Applied Physics Letters, 88 (26). 261919pp. doi:10.1063/1.2217160
Nepal, N., Nakarmi, M. L., Jang, H. U., Lin, J. Y., Jiang, H. X. (2006) Growth and photoluminescence studies of Zn-doped AlN epilayers. Applied Physics Letters, 89 (19). 192111pp. doi:10.1063/1.2387869
Nepal, N., Li, J., Nakarmi, M. L., Lin, J. Y., Jiang, H. X. (2006) Exciton localization in AlGaN alloys. Applied Physics Letters, 88 (6). 62103pp. doi:10.1063/1.2172728
 
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