Koyama, T., Sugawara, M., Hoshi, T., Uedono, A., Kaeding, J. F., Sharma, R., Nakamura, S., Chichibu, S. F. (2007) Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy. Applied Physics Letters, 90 (24). 241914pp. doi:10.1063/1.2748315
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy | ||
Journal | Applied Physics Letters | ||
Authors | Koyama, T. | Author | |
Sugawara, M. | Author | ||
Hoshi, T. | Author | ||
Uedono, A. | Author | ||
Kaeding, J. F. | Author | ||
Sharma, R. | Author | ||
Nakamura, S. | Author | ||
Chichibu, S. F. | Author | ||
Year | 2007 (June 11) | Volume | 90 |
Issue | 24 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.2748315Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8554587 | Long-form Identifier | mindat:1:5:8554587:8 |
GUID | 0 | ||
Full Reference | Koyama, T., Sugawara, M., Hoshi, T., Uedono, A., Kaeding, J. F., Sharma, R., Nakamura, S., Chichibu, S. F. (2007) Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy. Applied Physics Letters, 90 (24). 241914pp. doi:10.1063/1.2748315 | ||
Plain Text | Koyama, T., Sugawara, M., Hoshi, T., Uedono, A., Kaeding, J. F., Sharma, R., Nakamura, S., Chichibu, S. F. (2007) Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy. Applied Physics Letters, 90 (24). 241914pp. doi:10.1063/1.2748315 | ||
In | (2007, June) Applied Physics Letters Vol. 90 (24) AIP Publishing |
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