Reference Type | Journal (article/letter/editorial) |
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Title | Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density |
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Journal | Applied Physics Letters |
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Authors | Vignaud, D. | Author |
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Yarekha, D. A. | Author |
Lampin, J. F. | Author |
Zaknoune, M. | Author |
Godey, S. | Author |
Mollot, F. | Author |
Year | 2007 (June 11) | Volume | 90 |
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Issue | 24 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.2748336Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8554598 | Long-form Identifier | mindat:1:5:8554598:4 |
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GUID | 0 |
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Full Reference | Vignaud, D., Yarekha, D. A., Lampin, J. F., Zaknoune, M., Godey, S., Mollot, F. (2007) Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density. Applied Physics Letters, 90 (24). 242104pp. doi:10.1063/1.2748336 |
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Plain Text | Vignaud, D., Yarekha, D. A., Lampin, J. F., Zaknoune, M., Godey, S., Mollot, F. (2007) Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density. Applied Physics Letters, 90 (24). 242104pp. doi:10.1063/1.2748336 |
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In | (2007, June) Applied Physics Letters Vol. 90 (24) AIP Publishing |
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