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Kittl, J. A., O’Sullivan, B. J., Kaushik, V. S., Lauwers, A., Pawlak, M. A., Hoffmann, T., Demeurisse, C., Vrancken, C., Veloso, A., Absil, P., Biesemans, S. (2007) Work function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications. Applied Physics Letters, 90 (3). 32103pp. doi:10.1063/1.2430687

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Reference TypeJournal (article/letter/editorial)
TitleWork function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications
JournalApplied Physics Letters
AuthorsKittl, J. A.Author
O’Sullivan, B. J.Author
Kaushik, V. S.Author
Lauwers, A.Author
Pawlak, M. A.Author
Hoffmann, T.Author
Demeurisse, C.Author
Vrancken, C.Author
Veloso, A.Author
Absil, P.Author
Biesemans, S.Author
Year2007 (January 15)Volume90
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.2430687Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8554868Long-form Identifiermindat:1:5:8554868:0
GUID0
Full ReferenceKittl, J. A., O’Sullivan, B. J., Kaushik, V. S., Lauwers, A., Pawlak, M. A., Hoffmann, T., Demeurisse, C., Vrancken, C., Veloso, A., Absil, P., Biesemans, S. (2007) Work function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications. Applied Physics Letters, 90 (3). 32103pp. doi:10.1063/1.2430687
Plain TextKittl, J. A., O’Sullivan, B. J., Kaushik, V. S., Lauwers, A., Pawlak, M. A., Hoffmann, T., Demeurisse, C., Vrancken, C., Veloso, A., Absil, P., Biesemans, S. (2007) Work function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications. Applied Physics Letters, 90 (3). 32103pp. doi:10.1063/1.2430687
In(2007, January) Applied Physics Letters Vol. 90 (3) AIP Publishing

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Kittl, J. A., Lauwers, A., Demeurisse, C., Vrancken, C., Kubicek, S., Absil, P., Biesemans, S. (2007) Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25nm Ni fully silicided gates. Applied Physics Letters, 90 (17). 172107pp. doi:10.1063/1.2732820
Kittl, J. A., Pawlak, M. A., Torregiani, C., Lauwers, A., Demeurisse, C., Vrancken, C., Absil, P. P., Biesemans, S., Coia, C., Detavernier, C., Jordan-Sweet, J., Lavoie, C. (2007) Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications. Applied Physics Letters, 91 (17). 172108pp. doi:10.1063/1.2799247
Kittl, J. A., Pawlak, M. A., Torregiani, C., Lauwers, A., Demeurisse, C., Vrancken, C., Absil, P. P., Biesemans, S., Detavernier, C., Jordan-Sweet, J., Lavoie, C. (2007) Kinetics of Ni3Si2 formation in the Ni2Si–NiSi thin film reaction from in situ measurements. Applied Physics Letters, 91 (23). 232102pp. doi:10.1063/1.2822411
O’Sullivan, B. J., Pourtois, G., Kaushik, V. S., Schram, T., Kittl, J. A., Pantisano, L., De Gendt, S., Heyns, M. (2007) Charge characterization in metal-gate/high-κ layers: Effect of post-deposition annealing and gate electrode. Applied Physics Letters, 91 (3). 33502pp. doi:10.1063/1.2754647
Pawlak, M. A., Kaczer, B., Kim, M.-S., Popovici, M., Swerts, J., Wang, W.-C., Opsomer, K., Favia, P., Tomida, K., Belmonte, A., Govoreanu, B., Vrancken, C., Demeurisse, C., Bender, H., Afanas’ev, V. V., Debusschere, I., Altimime, L., Kittl, J. A. (2011) Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors. Applied Physics Letters, 98 (18). 182902pp. doi:10.1063/1.3584022
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Pawlak, M. A., Janssens, T., Lauwers, A., Vantomme, A., Vandervorst, W., Maex, K., Kittl, J. A. (2005) Mechanisms of arsenic segregation to the Ni2Si∕SiO2 interface during Ni2Si formation. Applied Physics Letters, 87 (18). 181910pp. doi:10.1063/1.2125124
Liu, J., Kwong, D. L. (2006) Improving work function tuning by preimplanting multiple dopants in Ni fully silicided gate. Applied Physics Letters, 88 (8). 82105pp. doi:10.1063/1.2178212
Yu, H. Y., Chang, S. Z., Aoulaiche, M., Wang, X. P., Adelmann, C., Kazer, B., Absil, P., Lauwers, A., Biesemans, S. (2008) Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge. Applied Physics Letters, 93 (26). 263502pp. doi:10.1063/1.3058695
 
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