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Buca, D., Holländer, B., Feste, S., Lenk, St., Trinkaus, H., Mantl, S., Loo, R., Caymax, M. (2007) Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers. Applied Physics Letters, 90 (3). 32108pp. doi:10.1063/1.2431702

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Reference TypeJournal (article/letter/editorial)
TitleAsymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers
JournalApplied Physics Letters
AuthorsBuca, D.Author
Holländer, B.Author
Feste, S.Author
Lenk, St.Author
Trinkaus, H.Author
Mantl, S.Author
Loo, R.Author
Caymax, M.Author
Year2007 (January 15)Volume90
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.2431702Search in ResearchGate
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Mindat Ref. ID8554887Long-form Identifiermindat:1:5:8554887:5
GUID0
Full ReferenceBuca, D., Holländer, B., Feste, S., Lenk, St., Trinkaus, H., Mantl, S., Loo, R., Caymax, M. (2007) Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers. Applied Physics Letters, 90 (3). 32108pp. doi:10.1063/1.2431702
Plain TextBuca, D., Holländer, B., Feste, S., Lenk, St., Trinkaus, H., Mantl, S., Loo, R., Caymax, M. (2007) Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers. Applied Physics Letters, 90 (3). 32108pp. doi:10.1063/1.2431702
In(2007, January) Applied Physics Letters Vol. 90 (3) AIP Publishing

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Buca, D., Holländer, B., Trinkaus, H., Mantl, S., Carius, R., Loo, R., Caymax, M., Schaefer, H. (2004) Tensely strained silicon on SiGe produced by strain transfer. Applied Physics Letters, 85 (13). 2499-2501 doi:10.1063/1.1790593
Minamisawa, R. A., Buca, D., Trinkaus, H., Holländer, B., Mantl, S., Destefanis, V., Hartmann, J. M. (2009) Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers. Applied Physics Letters, 95 (3). 34102pp. doi:10.1063/1.3180279
Buca, D., Minamisawa, R. A., Trinkaus, H., Holländer, B., Mantl, S., Loo, R., Caymax, M. (2009) Si+ ion implantation for strain relaxation of pseudomorphic Si1−xGex/Si(100) heterostructures. Journal of Applied Physics, 105 (11). 114905pp. doi:10.1063/1.3139274
Holländer, B., Buca, D., Mörschbächer, M., Lenk, St., Mantl, S., Herzog, H.-J., Hackbarth, Th., Loo, R., Caymax, M., Fichtner, P. F. P. (2004) Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation. Journal of Applied Physics, 96 (3). 1745-1747 doi:10.1063/1.1765851
Buca, D., Minamisawa, R. A., Trinkaus, H., Holländer, B., Nguyen, N. D., Loo, R., Mantl, S. (2009) Relaxation of strained pseudomorphic SixGe1−x layers on He-implanted Si/δ-Si:C/Si(100) substrates. Applied Physics Letters, 95 (14). 144103pp. doi:10.1063/1.3240409
Trinkaus, H., Buca, D., Minamisawa, R. A., Holländer, B., Luysberg, M., Mantl, S. (2012) Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures. Journal of Applied Physics, 111 (1). 14904pp. doi:10.1063/1.3672447
Holländer, B., Buca, D., Lenk, St., Mantl, S., Herzog, H.-J., Hackbarth, Th., Loo, R., Caymax, M., Mörschbächer, M.J., Fichtner, P.F.P. (2006) Strain relaxation of pseudomorphic Si1−xGex/Si(100) heterostructures by Si+ ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242 (1). 568-571 doi:10.1016/j.nimb.2005.08.071
Trinkaus, H., Buca, D., Holländer, B., Minamisawa, R. A., Mantl, S., Hartmann, J. M. (2010) Strain tensors in layer systems by precision ion channeling measurements. Journal of Applied Physics, 107 (12). 124906pp. doi:10.1063/1.3415530
Luysberg, M., Kirch, D., Trinkaus, H., Holländer, B., Lenk, St., Mantl, S., Herzog, H.-J., Hackbarth, T., Fichtner, P. F. P. (2002) Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates. Journal of Applied Physics, 92 (8). 4290-4295 doi:10.1063/1.1504496
Trinkaus, H., Holländer, B., Rongen, St., Mantl, S., Herzog, H.-J., Kuchenbecker, J., Hackbarth, T. (2000) Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures. Applied Physics Letters, 76 (24). 3552-3554 doi:10.1063/1.126704
Chen, Peng, Chu, Paul K., Höchbauer, T., Nastasi, M., Buca, D., Mantl, S., Theodore, N. David, Alford, T. L., Mayer, J. W., Loo, R., Caymax, M., Cai, M., Lau, S. S. (2004) Plasma hydrogenation of strain-relaxed SiGe∕Si heterostructure for layer transfer. Applied Physics Letters, 85 (21). 4944-4946 doi:10.1063/1.1824171
 
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