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Ogawa, Satoshi, Kimura, Yasuo, Niwano, Michio, Ishii, Hisao (2007) Trap elimination and injection switching at organic field effect transistor by inserting an alkane (C44H90) layer. Applied Physics Letters, 90 (3). 33504pp. doi:10.1063/1.2431713

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Reference TypeJournal (article/letter/editorial)
TitleTrap elimination and injection switching at organic field effect transistor by inserting an alkane (C44H90) layer
JournalApplied Physics Letters
AuthorsOgawa, SatoshiAuthor
Kimura, YasuoAuthor
Niwano, MichioAuthor
Ishii, HisaoAuthor
Year2007 (January 15)Volume90
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.2431713Search in ResearchGate
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Mindat Ref. ID8554893Long-form Identifiermindat:1:5:8554893:6
GUID0
Full ReferenceOgawa, Satoshi, Kimura, Yasuo, Niwano, Michio, Ishii, Hisao (2007) Trap elimination and injection switching at organic field effect transistor by inserting an alkane (C44H90) layer. Applied Physics Letters, 90 (3). 33504pp. doi:10.1063/1.2431713
Plain TextOgawa, Satoshi, Kimura, Yasuo, Niwano, Michio, Ishii, Hisao (2007) Trap elimination and injection switching at organic field effect transistor by inserting an alkane (C44H90) layer. Applied Physics Letters, 90 (3). 33504pp. doi:10.1063/1.2431713
In(2007, January) Applied Physics Letters Vol. 90 (3) AIP Publishing

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