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Sato, Yoshihiro, Kinoshita, Kentaro, Aoki, Masaki, Sugiyama, Yoshihiro (2007) Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model. Applied Physics Letters, 90 (3). 33503pp. doi:10.1063/1.2431792

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Reference TypeJournal (article/letter/editorial)
TitleConsideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model
JournalApplied Physics Letters
AuthorsSato, YoshihiroAuthor
Kinoshita, KentaroAuthor
Aoki, MasakiAuthor
Sugiyama, YoshihiroAuthor
Year2007 (January 15)Volume90
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.2431792Search in ResearchGate
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Mindat Ref. ID8554927Long-form Identifiermindat:1:5:8554927:2
GUID0
Full ReferenceSato, Yoshihiro, Kinoshita, Kentaro, Aoki, Masaki, Sugiyama, Yoshihiro (2007) Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model. Applied Physics Letters, 90 (3). 33503pp. doi:10.1063/1.2431792
Plain TextSato, Yoshihiro, Kinoshita, Kentaro, Aoki, Masaki, Sugiyama, Yoshihiro (2007) Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model. Applied Physics Letters, 90 (3). 33503pp. doi:10.1063/1.2431792
In(2007, January) Applied Physics Letters Vol. 90 (3) AIP Publishing

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Sato, Yoshihiro, Tsunoda, Koji, Aoki, Masaki, Sugiyama, Yoshihiro (2009) Novel Circuitry Configuration with Paired-Cell Erase Operation for High-Density 90-nm Embedded Resistive Random Access Memory. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c075
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Kinoshita, K., Tamura, T., Aoki, M., Sugiyama, Y., Tanaka, H. (2006) Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide. Applied Physics Letters, 89 (10). 103509pp. doi:10.1063/1.2339032
Yoshida, Chikako, Tsunoda, Kohji, Noshiro, Hideyuki, Sugiyama, Yoshihiro (2007) High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application. Applied Physics Letters, 91 (22). 223510pp. doi:10.1063/1.2818691
Hanada, Akihiro, Kinoshita, Kentaro, Kishida, Satoru (2012) Resistive switching by migration of hydrogen ions. Applied Physics Letters, 101 (4). 43507pp. doi:10.1063/1.4737897
Kinoshita, K., Tsunoda, K., Sato, Y., Noshiro, H., Yagaki, S., Aoki, M., Sugiyama, Y. (2008) Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance. Applied Physics Letters, 93 (3). 33506pp. doi:10.1063/1.2959065
Saitoh, Shuhei, Kinoshita, Kentaro (2020) Oxide-based selector with trap-filling-controlled threshold switching. Applied Physics Letters, 116 (11). 112101pp. doi:10.1063/1.5143631
Kim, Kyung Min, Choi, Byung Joon, Hwang, Cheol Seong (2007) Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films. Applied Physics Letters, 90 (24). 242906pp. doi:10.1063/1.2748312
Moriyama, Takumi, Yamasaki, Takahiro, Hida, Sohta, Ohno, Takahisa, Kishida, Satoru, Kinoshita, Kentaro (2017) Switching mechanism in resistive random access memory by first-principles calculation using practical model based on experimental results. Japanese Journal of Applied Physics, 56 (4) 4 doi:10.7567/jjap.56.04ce12
 
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