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Tan, J., Davies, G., Hayama, S., Nylandsted Larsen, A. (2007) Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing. Applied Physics Letters, 90 (4). 41910pp. doi:10.1063/1.2435976

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Reference TypeJournal (article/letter/editorial)
TitleEvolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing
JournalApplied Physics Letters
AuthorsTan, J.Author
Davies, G.Author
Hayama, S.Author
Nylandsted Larsen, A.Author
Year2007 (January 22)Volume90
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.2435976Search in ResearchGate
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Mindat Ref. ID8555082Long-form Identifiermindat:1:5:8555082:5
GUID0
Full ReferenceTan, J., Davies, G., Hayama, S., Nylandsted Larsen, A. (2007) Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing. Applied Physics Letters, 90 (4). 41910pp. doi:10.1063/1.2435976
Plain TextTan, J., Davies, G., Hayama, S., Nylandsted Larsen, A. (2007) Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing. Applied Physics Letters, 90 (4). 41910pp. doi:10.1063/1.2435976
In(2007, January) Applied Physics Letters Vol. 90 (4) AIP Publishing

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Tishkov, V. S., Gaiduk, P. I., Shiryaev, S. Yu., Nylandsted Larsen, A. (1996) Rapid thermal annealing of arsenicā€implanted Si0.6Ge0.4 alloys: Temperature effects. Applied Physics Letters, 68 (5). 655-657 doi:10.1063/1.116499
Kringho/j, P., Gribkovskii, V. V., Nylandsted Larsen, A. (1990) Rapid thermal annealing of Geā€implanted InP. Applied Physics Letters, 57 (15). 1514-1516 doi:10.1063/1.103380
Wu, H. W., Tsai, C. J., Chen, L. J. (2007) Room temperature ferromagnetism in Mn+-implanted Si nanowires. Applied Physics Letters, 90 (4). 43121pp. doi:10.1063/1.2432273
de Boer, W. B., Meyer, D. J. (1991) Lowā€temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure. Applied Physics Letters, 58 (12). 1286-1288 doi:10.1063/1.104338
Barik, S., Tan, H. H., Jagadish, C. (2007) High temperature rapid thermal annealing of phosphorous ion implanted InAsāˆ•InP quantum dots. Applied Physics Letters, 90 (9). 93106pp. doi:10.1063/1.2710006
Hueging, N., Luysberg, M., Urban, K., Buca, D., Mantl, S. (2005) Evolution of the defect structure in helium implanted SiGeāˆ•Si heterostructures investigated by in situ annealing in a transmission electron microscope. Applied Physics Letters, 86 (4). 42112pp. doi:10.1063/1.1852705
Shiryaev, S. Yu., Larsen, A. Nylandsted, Safronov, N. (1989) Rapid thermal annealing of indiumā€implanted silicon single crystals. Journal of Applied Physics, 65 (11). 4220-4224 doi:10.1063/1.343304
Larsen, A. Nylandsted, Shiryaev, S. Yu., So/rensen, E. Schwartz, Tidemandā€Petersson, P. (1986) Rapid thermal annealing of high concentration, arsenic implanted silicon single crystals. Applied Physics Letters, 48 (26). 1805-1807 doi:10.1063/1.96793
Gaiduk, P.I., Nylandsted Larsen, A., Wesch, W. (2009) Strain-driven defect evolution in Sn+ implanted Si/SiGe multilayer structure. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267 (8). 1239-1242 doi:10.1016/j.nimb.2009.01.024
Gaiduk, P. I., Larsen, A. Nylandsted (1990) Secondary defect evolution in ionā€implanted silicon. Journal of Applied Physics, 68 (10). 5081-5089 doi:10.1063/1.347071
Williams, J. S., Austin, M. W. (1980) Lowā€temperature epitaxial regrowth of ionā€implanted amorphous GaAs. Applied Physics Letters, 36 (12). 994-996 doi:10.1063/1.91656
 
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