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Feng, J. F., Feng, Gen, Coey, J. M. D., Han, X. F., Zhan, W. S. (2007) High inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions. Applied Physics Letters, 91 (10). 102505pp. doi:10.1063/1.2779241

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Reference TypeJournal (article/letter/editorial)
TitleHigh inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions
JournalApplied Physics Letters
AuthorsFeng, J. F.Author
Feng, GenAuthor
Coey, J. M. D.Author
Han, X. F.Author
Zhan, W. S.Author
Year2007 (September 3)Volume91
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2779241Search in ResearchGate
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Mindat Ref. ID8555775Long-form Identifiermindat:1:5:8555775:8
GUID0
Full ReferenceFeng, J. F., Feng, Gen, Coey, J. M. D., Han, X. F., Zhan, W. S. (2007) High inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions. Applied Physics Letters, 91 (10). 102505pp. doi:10.1063/1.2779241
Plain TextFeng, J. F., Feng, Gen, Coey, J. M. D., Han, X. F., Zhan, W. S. (2007) High inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions. Applied Physics Letters, 91 (10). 102505pp. doi:10.1063/1.2779241
In(2007, September) Applied Physics Letters Vol. 91 (10) AIP Publishing

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Feng, J. F., Chen, J. Y., Kurt, H., Coey, J. M. D. (2012) Very low 1/f barrier noise in sputtered MgO magnetic tunnel junctions with high tunneling magnetoresistance. Journal of Applied Physics, 112 (12). 123907pp. doi:10.1063/1.4769805
Feng, J.F., Feng, Gen, Ma, Q.L., Han, X.F., Coey, J.M.D. (2010) Temperature dependence of inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions. Journal of Magnetism and Magnetic Materials, 322. 1446-1448 doi:10.1016/j.jmmm.2009.04.072
Yu, G. Q., Kurt, H., Feng, J. F., XU, K., Coey, J. M. D., Han, X. F. (2012) Spin-dependent tunneling spectroscopy in MgO-based double-barrier magnetic tunnel junctions. Journal of Applied Physics, 111 (7). 7pp. doi:10.1063/1.3677776
Feng, J. F., Diao, Z., Feng, Gen, Nowak, E. R., Coey, J. M. D. (2010) Magnetic noise in MgO-based magnetic tunnel junction rings. Applied Physics Letters, 96 (5). 52504pp. doi:10.1063/1.3295707
Yu, G. Q., Diao, Z., Feng, J. F., Kurt, H., Han, X. F., Coey, J. M. D. (2011) 1/f noise in MgO double-barrier magnetic tunnel junctions. Applied Physics Letters, 98 (11). 112504pp. doi:10.1063/1.3562951
Feng, Gen, van Dijken, Sebastiaan, Coey, J. M. D. (2006) Influence of annealing on the bias voltage dependence of tunneling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes. Applied Physics Letters, 89 (16). 162501pp. doi:10.1063/1.2362977
Feng, G., van Dijken, Sebastiaan, Feng, J. F., Coey, J. M. D., Leo, T., Smith, David J. (2009) Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage. Journal of Applied Physics, 105 (3). 33916pp. doi:10.1063/1.3068186
Li, D. L., Feng, J. F., Yu, G. Q., Guo, P., Chen, J. Y., Wei, H. X., Han, X. F., Coey, J. M. D. (2013) Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer. Journal of Applied Physics, 114 (21). 213909pp. doi:10.1063/1.4838116
Diao, Z., Feng, J. F., Kurt, H., Feng, G., Coey, J. M. D. (2010) Reduced low frequency noise in electron beam evaporated MgO magnetic tunnel junctions. Applied Physics Letters, 96 (20). 202506pp. doi:10.1063/1.3431620
Feng, J.F., Feng, Gen, Ma, Q.L., Han, X.F., Coey, J.M.D. (2009) Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions. Journal of Magnetism and Magnetic Materials, 321. 3046-3048 doi:10.1016/j.jmmm.2009.04.069
Feng, J. F., Chen, J. Y., Venkatesan, M., Feng, G., Han, X. F., Coey, J. M. D. (2010) Superparamagnetism in MgO-based magnetic tunnel junctions with a thin pinned ferromagnetic electrode. Physical Review B, 81 (20) doi:10.1103/physrevb.81.205212
 
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