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Chen, Wei-Ren, Chang, Ting-Chang, Hsieh, Yen-Ting, Sze, Simon M., Chang, Chun-Yen (2007) Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application. Applied Physics Letters, 91 (10). 102106pp. doi:10.1063/1.2779931

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Reference TypeJournal (article/letter/editorial)
TitleFormation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application
JournalApplied Physics Letters
AuthorsChen, Wei-RenAuthor
Chang, Ting-ChangAuthor
Hsieh, Yen-TingAuthor
Sze, Simon M.Author
Chang, Chun-YenAuthor
Year2007 (September 3)Volume91
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2779931Search in ResearchGate
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Mindat Ref. ID8555798Long-form Identifiermindat:1:5:8555798:9
GUID0
Full ReferenceChen, Wei-Ren, Chang, Ting-Chang, Hsieh, Yen-Ting, Sze, Simon M., Chang, Chun-Yen (2007) Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application. Applied Physics Letters, 91 (10). 102106pp. doi:10.1063/1.2779931
Plain TextChen, Wei-Ren, Chang, Ting-Chang, Hsieh, Yen-Ting, Sze, Simon M., Chang, Chun-Yen (2007) Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application. Applied Physics Letters, 91 (10). 102106pp. doi:10.1063/1.2779931
In(2007, September) Applied Physics Letters Vol. 91 (10) AIP Publishing

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