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Kim, T.-W., Song, J.-I., Jang, J. H., Kim, D.-H., Park, S. D., Bae, J. W., Yeom, G. Y. (2007) Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching. Applied Physics Letters, 91 (10). 102110pp. doi:10.1063/1.2780113

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Reference TypeJournal (article/letter/editorial)
TitleFabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching
JournalApplied Physics Letters
AuthorsKim, T.-W.Author
Song, J.-I.Author
Jang, J. H.Author
Kim, D.-H.Author
Park, S. D.Author
Bae, J. W.Author
Yeom, G. Y.Author
Year2007 (September 3)Volume91
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2780113Search in ResearchGate
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Mindat Ref. ID8555816Long-form Identifiermindat:1:5:8555816:4
GUID0
Full ReferenceKim, T.-W., Song, J.-I., Jang, J. H., Kim, D.-H., Park, S. D., Bae, J. W., Yeom, G. Y. (2007) Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching. Applied Physics Letters, 91 (10). 102110pp. doi:10.1063/1.2780113
Plain TextKim, T.-W., Song, J.-I., Jang, J. H., Kim, D.-H., Park, S. D., Bae, J. W., Yeom, G. Y. (2007) Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching. Applied Physics Letters, 91 (10). 102110pp. doi:10.1063/1.2780113
In(2007, September) Applied Physics Letters Vol. 91 (10) AIP Publishing

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