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Wang, Y., Cheung, K. P. (2007) Carrier capture at the SiO2–Si interface: A physical model. Applied Physics Letters, 91 (11). 113509pp. doi:10.1063/1.2778354

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Reference TypeJournal (article/letter/editorial)
TitleCarrier capture at the SiO2–Si interface: A physical model
JournalApplied Physics Letters
AuthorsWang, Y.Author
Cheung, K. P.Author
Year2007 (September 10)Volume91
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.2778354Search in ResearchGate
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Mindat Ref. ID8555842Long-form Identifiermindat:1:5:8555842:9
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Full ReferenceWang, Y., Cheung, K. P. (2007) Carrier capture at the SiO2–Si interface: A physical model. Applied Physics Letters, 91 (11). 113509pp. doi:10.1063/1.2778354
Plain TextWang, Y., Cheung, K. P. (2007) Carrier capture at the SiO2–Si interface: A physical model. Applied Physics Letters, 91 (11). 113509pp. doi:10.1063/1.2778354
In(2007, September) Applied Physics Letters Vol. 91 (11) AIP Publishing

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Kunjunny, T., Ferry, D. K. (1980) Calculation of the Auger line at the Si/SiO2 interface. Applied Physics Letters, 37 (11). 1031-1032 doi:10.1063/1.91753
Ryan, J. T., Southwick, R. G., Campbell, J. P., Cheung, K. P., Young, C. D., Suehle, J. S. (2011) On the “U-shaped” continuum of band edge states at the Si/SiO2 interface. Applied Physics Letters, 99 (22). 223516pp. doi:10.1063/1.3664772
Wang, P. X., Scheid, W., Ho, Y. K. (2007) Electron capture acceleration channel in a slit laser beam. Applied Physics Letters, 90 (11). 111113pp. doi:10.1063/1.2713168
Jin, Hao, Weber, K. J., Dang, N. C., Jellett, W. E. (2007) Defect generation at the Si–SiO2 interface following corona charging. Applied Physics Letters, 90 (26). 262109pp. doi:10.1063/1.2749867
Ryan, J. T., Matsuda, A., Campbell, J. P., Cheung, K. P. (2015) Interface-state capture cross section—Why does it vary so much?. Applied Physics Letters, 106 (16). 163503pp. doi:10.1063/1.4919100
De Wolf, Stefaan, Kondo, Michio (2007) Boron-doped a-Si:H∕c-Si interface passivation: Degradation mechanism. Applied Physics Letters, 91 (11). 112109pp. doi:10.1063/1.2783972
Ryan, J. T., Yu, L. C., Han, J. H., Kopanski, J. J., Cheung, K. P., Zhang, F., Wang, C., Campbell, J. P., Suehle, J. S. (2011) Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states. Applied Physics Letters, 98 (23). 233502pp. doi:10.1063/1.3597298
Vanheusden, K., Devine, R. A. B. (2000) The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si–SiO2 interface. Applied Physics Letters, 76 (21). 3109-3111 doi:10.1063/1.126539
Albohn, J., Füssel, W., Sinh, N. D., Kliefoth, K., Fuhs, W. (2000) Capture cross sections of defect states at the Si/SiO2 interface. Journal of Applied Physics, 88 (2). 842-849 doi:10.1063/1.373746
Lu, Jinggang, Rozgonyi, George (2007) Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)∕(100) bonded silicon wafer. Applied Physics Letters, 91 (17). 172106pp. doi:10.1063/1.2800811
Trita, A., Cristiani, I., Degiorgio, V., Chrastina, D., von Känel, H. (2007) Measurement of carrier lifetime and interface recombination velocity in Si–Ge waveguides. Applied Physics Letters, 91 (4). 41112pp. doi:10.1063/1.2760133
 
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