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Samanta, Piyas, Zhu, Chunxiang, Chan, Mansun (2007) On the electrical stress-induced oxide-trapped charges in thin HfO2∕SiO2 gate dielectric stack. Applied Physics Letters, 91 (11). 113516pp. doi:10.1063/1.2783967

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Reference TypeJournal (article/letter/editorial)
TitleOn the electrical stress-induced oxide-trapped charges in thin HfO2∕SiO2 gate dielectric stack
JournalApplied Physics Letters
AuthorsSamanta, PiyasAuthor
Zhu, ChunxiangAuthor
Chan, MansunAuthor
Year2007 (September 10)Volume91
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.2783967Search in ResearchGate
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Mindat Ref. ID8555887Long-form Identifiermindat:1:5:8555887:2
GUID0
Full ReferenceSamanta, Piyas, Zhu, Chunxiang, Chan, Mansun (2007) On the electrical stress-induced oxide-trapped charges in thin HfO2∕SiO2 gate dielectric stack. Applied Physics Letters, 91 (11). 113516pp. doi:10.1063/1.2783967
Plain TextSamanta, Piyas, Zhu, Chunxiang, Chan, Mansun (2007) On the electrical stress-induced oxide-trapped charges in thin HfO2∕SiO2 gate dielectric stack. Applied Physics Letters, 91 (11). 113516pp. doi:10.1063/1.2783967
In(2007, September) Applied Physics Letters Vol. 91 (11) AIP Publishing

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Samanta, Piyas, Man, Tsz Yin, Zhang, Qingchun, Zhu, Chunxiang, Chan, Mansun (2006) Direct tunneling stress-induced leakage current in ultrathin HfO2∕SiO2 gate dielectric stacks. Journal of Applied Physics, 100 (9). 94507pp. doi:10.1063/1.2372313
Samanta, Piyas, Cheng, Chin-Lung, Lee, Yao-Jen, Chan, Mansun (2009) Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO2 and HfO2/SiO2 gate dielectric stacks. Journal of Applied Physics, 105 (12). 124507pp. doi:10.1063/1.3148297
Samanta, Piyas, Chan, Mansun (2004) Effects of gate material on Fowler-Nordheim stress induced thin silicon dioxide degradation under negative gate bias. Journal of Applied Physics, 96 (3). 1547-1555 doi:10.1063/1.1766094
Samanta, Piyas, Sarkar, C. K. (1998) Coupled charge trapping dynamics in thin SiO2 gate oxide under Fowler–Nordheim stress at low electron fluence. Journal of Applied Physics, 83 (5). 2662-2669 doi:10.1063/1.367029
Samanta, Piyas (1999) Hole trapping due to anode hole injection in thin tunnel gate oxides in memory devices under Fowler–Nordheim stress. Applied Physics Letters, 75 (19). 2966-2968 doi:10.1063/1.125203
Samanta, Piyas, Cheng, Chin-Lung, Lee, Yao-Jen (2009) Charge Trapping Related Degradation of Thin HfAlO∕SiO[sub 2] Gate Dielectric Stack during Constant-Voltage Stress. Journal of the Electrochemical Society, 156. doi:10.1149/1.3148203
Samanta, Piyas, Mandal, Krishna C. (2016) Simulation of temperature dependent dielectric breakdown in n+-polySi/SiO2/n-6H-SiC structures during Poole-Frenkel stress at positive gate bias. Journal of Applied Physics, 120 (6). 64504pp. doi:10.1063/1.4960579
Yu, Xiongfei, Zhu, Chunxiang, Yu, Mingbin (2007) Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability. Applied Physics Letters, 90 (10). 103502pp. doi:10.1063/1.2709948
Xie, Ruilong, Wu, Nan, Shen, Chen, Zhu, Chunxiang (2008) Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility. Applied Physics Letters, 93 (8). 83510pp. doi:10.1063/1.2976632
Huang, Heng-Sheng, Samanta, Piyas, Tzeng, Tsung-Jian, Chen, Shuang-Yuan, Liu, Chuan-Hsi (2012) Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks. Applied Physics Letters, 100 (2). 23501pp. doi:10.1063/1.3675454
Xie, Ruilong, Yu, Mingbin, Lai, Mei Ying, Chan, Lap, Zhu, Chunxiang (2008) High-k gate stack on germanium substrate with fluorine incorporation. Applied Physics Letters, 92 (16). 163505pp. doi:10.1063/1.2913048
 
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